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A method for forming an embedded flash memory structure

An embedded and flash memory technology, applied in electrical components, electrical solid-state devices, circuits, etc., can solve problems such as increasing process complexity, achieve the effect of reducing the number of photomasks and saving process costs

Active Publication Date: 2019-01-08
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In the prior art, at least three photomask processes are required to implant trap ions in the CELL device area, fabricate flash memory cells in the Cell device area, and implant trap ions in the logic area, which increases the complexity of the process

Method used

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  • A method for forming an embedded flash memory structure
  • A method for forming an embedded flash memory structure
  • A method for forming an embedded flash memory structure

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Embodiment Construction

[0031] The specific implementation manner of the present invention will be described in more detail below with reference to schematic diagrams. The advantages and features of the present invention will be more apparent from the following description. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0032] In the following description, it will be understood that when a layer (or film), region, pattern or structure is referred to as being "on" a substrate, layer (or film), region and / or pattern, it can be directly on another layer or substrate, and / or intervening layers may also be present. Further, it will be understood that when a layer is referred to as being 'under' another layer, it can be directly under, and / or one or more intervening layers may also be present. In addition, designations regarding 'on' ...

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Abstract

The invention relates to a method for forming an embedded flash memory structure, comprising the steps of providing a substrate, performing a first photomask process to expose a first well injection region in a memory region and exposing a second well injection region in a logic region; Performing first ion implantation while simultaneously performing well implantation in the first well implantation region and the second well implantation region; Executing a second mask process to expose a flash memory cell region of the memory region, the flash memory cell region being located within a firstwell injection region range; Performing a second ion implantation to adjust the trap ion concentration in the flash memory unit region; And forming a flash memory unit in the flash memory unit area. The method for forming the embedded flash memory structure of the invention can reduce the number of masks and save the process cost.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a method for forming an embedded flash memory structure. Background technique [0002] Flash memory (flash), as a safe and fast storage body, has become the most important carrier of data and programs in embedded systems due to its small size, large capacity, low cost, and a series of advantages such as power-off data not lost. [0003] In recent years, with the rapid development of the smart electronic product market, the use of various types of MCU (micro controller unit, microcontroller) and SoC (System-on-Chip, system on chip) has penetrated into automotive electronics, industrial control and medical products and other aspects of daily life. And high-performance MCU or SoC products are inseparable from the support of high-performance embedded flash memory (embedded flash, E-flash) core. No matter in terms of chip area, system performance and power consumption, or in terms of m...

Claims

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Application Information

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IPC IPC(8): H01L27/11521H01L27/11531H01L21/265
CPCH01L21/26513H10B41/42H10B41/30
Inventor 李冰寒王哲献江红高超
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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