A kind of anti-total dose radiation hardening method of flash memory

Abstract

The present invention provides a method for hardening anti-total dose radiation of flash memory, which includes: step 1, providing a flash memory storage array, and a monitoring storage array adjacent to the flash memory storage array; step 2, when the flash memory storage array is not working, Close the connection between the flash memory storage array and the peripheral circuit, make the monitoring storage array start to work, and apply a read voltage to the gate of the monitoring array unit; step 3, output the total current of the bit line of the monitoring storage array, and compare it with the reference current threshold Compare; step 4, judge the comparison result, if the total current of the bit line is less than the reference current, read the monitoring storage array again after a fixed time interval; if the total current of the bit line is greater than or equal to the reference current, then read the flash memory storage array and the monitoring storage array Perform a refresh operation. The invention can find electric leakage by monitoring the magnitude of the bit line current of the storage array, and improve the ability of the storage array to resist total dose radiation.

Description

technical field [0001] The present invention relates to the technical field of digital circuits, in particular to a method for strengthening the anti-total dose radiation of flash memory. Background technique [0002] Flash memory has the advantages of online programmability, no loss of data and information when power off, high read and write speed, and good vibration resistance. In recent years, it has been widely used in aerospace electronic systems. Various high-energy particles in space will seriously affect various electronic components including Flash memory, causing various radiation effects. Among them, the total dose effect is one of the most important problems that Flash memory needs to face in space applications. [0003] The total dose effect is the cumulative dose of ionizing radiation effect, which is a long-term radiation dose accumulation process leading to device failure. The damage mechanism of the total dose effect to the device is mainly to generate a l...

AI Technical Summary

Problems solved by technology

However, EDAC can only find and correct the error after the circuit makes an error, and cannot find the error in advance, and when the storage circuit has a multi-bit storage data error due to the influence of the total dose of radiation, the EDAC circuit automatically corrects one error and detects two errors. The function is obviously insufficient

In addition, since all functions of EDAC are automatically completed by hardware design, it needs to occupy a large chip area

Images