A flip-chip AlGaInP red light Micro-LED and a preparation method thereof

A flip chip and red light technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of small energy gap and limit the light extraction performance of red LEDs, and achieve easy access, improved bonding yield, and clear preparation principles Effect

Active Publication Date: 2019-01-18
肖和平
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the GaAs energy gap is relatively small, which has an absorption effect on the light emitted by AlGaInP, thus limiting the light extraction performance of red LEDs

Method used

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  • A flip-chip AlGaInP red light Micro-LED and a preparation method thereof
  • A flip-chip AlGaInP red light Micro-LED and a preparation method thereof

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Embodiment Construction

[0027] The present invention will be further described below in conjunction with accompanying drawing:

[0028] like Figure 1-2As shown, a fabrication method of AlGaInP red light Micro-LED with flip-chip structure, AlGaInP LED epitaxial layer grows corrosion stop layer, n-GaAs ohmic contact layer sequentially on n-type GaAs substrate by metal-organic chemical vapor deposition (MOCVD) 101, n-AlGaInP expansion layer 102, DBR layer 103, n-AlInP confinement layer 104, light emitting layer 105, p-AlInP confinement layer 106, p-AlGaInP expansion layer 107, p-GaP current spreading layer 108, p-GaP ohmic Contact layer 109, p-GaP roughened bonding layer 110, use acid system roughening solution to roughen p-GaP roughened bonding layer 110, deposit ITO layer 200 by electron beam evaporation on the surface after roughening, on the ITO layer Spin-coat a layer of UV-curable optical adhesive (NOA73) on the surface at a high speed, and use UV curing for 5-500 minutes after coating to form a...

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Abstract

The invention belongs to the technical field of LED production and manufacture, and relates to a flip-chip structure AlGaInP red light Micro-LED and a preparation method thereof. The flip-chip structure AlGaInP red light Micro-LED includes an n-GaAs ohmic contact layer 101, an n-AlGaInP expansion layer 102, a DBR layer 103, an n-AlInP confinement layer 104, a light emitting layer 105, a p- AlInP confinement layer 106, a p- AlGaInP extended layer 107, a p-GaP current spread layer 108, a p-GaP ohmic contact lay 109, a p-GaP coarse bonding lay 110, an ITO layer 200, a cured layer 300, a substrate400, an electrode layer 501, a first metal layer 502, a protective layer 600, an ODR layer 601 and a second metal layer 700 ; the structure is novel, the working principle is clear, and the light emitting efficiency is improved; As that bonding layer between indium tin oxide (ITO) and the ultraviolet cure optical adhesive is used as a bonding layer connecting the sapphire, the bonding yield can be improved, and the technical route of the invention is reliable, the technical foundation is mature, the raw materials are easy to obtain, and the invention is favorable for batch production.

Description

technical field [0001] The invention belongs to the technical field of LED production and manufacturing, and relates to an AlGaInP red Micro-LED with an inverted structure and a preparation method thereof. Background technique [0002] Light-emitting diode (LED) is a widely used solid-state light-emitting device. The inherent physical characteristics of LED enable it to work at low voltage / current, and it has the characteristics of high efficiency, good reliability, and long life. LEDs can also operate at very high or low temperatures. Therefore, it is widely used in indoor and outdoor lighting, automobile headlights, traffic lights and display screens. Among them, the small-sized micro-light-emitting diode LED (Micro-LED) has become a technology with considerable development prospects in the past two years. Red, green, blue three color bands) field has great potential application value. [0003] With years of technical research and development, the epitaxy and chip techn...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/22H01L33/10H01L33/00H01L33/46
CPCH01L33/0093H01L33/10H01L33/22H01L33/46H01L2933/0025
Inventor 肖和平
Owner 肖和平
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