The invention belongs to the technical field of LED production and manufacture, and relates to a flip-chip structure AlGaInP red light Micro-LED and a preparation method thereof. The flip-chip structure AlGaInP red light Micro-LED includes an n-GaAs ohmic contact layer 101, an n-AlGaInP expansion layer 102, a DBR layer 103, an n-AlInP confinement layer 104, a light emitting layer 105, a p- AlInP confinement layer 106, a p- AlGaInP extended layer 107, a p-GaP current spread layer 108, a p-GaP ohmic contact lay 109, a p-GaP coarse bonding lay 110, an ITO layer 200, a cured layer 300, a substrate400, an electrode layer 501, a first metal layer 502, a protective layer 600, an ODR layer 601 and a second metal layer 700 ; the structure is novel, the working principle is clear, and the light emitting efficiency is improved; As that bonding layer between indium tin oxide (ITO) and the ultraviolet cure optical adhesive is used as a bonding layer connecting the sapphire, the bonding yield can be improved, and the technical route of the invention is reliable, the technical foundation is mature, the raw materials are easy to obtain, and the invention is favorable for batch production.