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OTFT ammonia gas sensor embedded with small molecule additive and preparation method of OTFT ammonia gas sensor

A technology of ammonia sensor and additive, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve problems such as poor stability, achieve good stability, improve stability, and be easy to implement and promote.

Inactive Publication Date: 2019-01-25
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The object of the present invention is to overcome the poor stability of the existing OTFT ammonia sensor while ensuring high sensitivity through an OTFT ammonia sensor embedded with a small molecule additive and a preparation method thereof, and through a simple preparation method The problem

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  • OTFT ammonia gas sensor embedded with small molecule additive and preparation method of OTFT ammonia gas sensor

Examples

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Embodiment 1

[0057] Embodiment 1: A kind of OTFT ammonia gas sensor embedded with small molecule additive provided by the preferred embodiment of the present invention, such as figure 1 As shown, it is a bottom-gate top-contact structure, and the material and thickness of each layer of the device are: substrate 1 is glass; gate electrode 2 is ITO, with a thickness of 200nm; dielectric layer 3 is PMMA, with a thickness of 500nm; organic semiconductor layer 4 is P3HT with a thickness of 30nm; the embedded small molecule additive 5 is TCNQ; the source electrode 6 and the drain electrode 7 are both Au with a thickness of 50nm.

[0058] The preparation method is as follows:

[0059] 1. Thoroughly clean the substrate 1 on which the gate electrode ITO has been sputtered, and dry it with dry nitrogen after cleaning;

[0060] 2. Prepare a PMMA film on the surface of ITO by spin coating to form a dielectric layer 3;

[0061] 3. Heat and bake the spin-coated PMMA film to remove excess solvent;

[...

Embodiment 2

[0065] Embodiment 2: A kind of OTFT ammonia gas sensor embedded with small molecule additive provided by the preferred embodiment of the present invention, such as figure 1 The bottom-gate top-contact structure is shown, and the material and thickness of each layer of the device are as follows: substrate 1 is polytetrafluoroethylene; gate electrode 2 is ITO with a thickness of 200nm; dielectric layer 3 is (PVP-co-PMF) , with a thickness of 450nm; the organic semiconductor layer 4 is Tips-pentacene, with a thickness of 35nm; the embedded small molecule additive 5 is F4TCNQ; the source electrode 6 and the drain electrode 7 are both Au, with a thickness of 75nm.

[0066] The preparation method is the same as in Example 1.

Embodiment 3

[0067] Embodiment 3: as figure 1 The bottom-gate top-contact structure is shown, and the material and thickness of each layer of the device are as follows: the substrate 1 is polyethylene terephthalate; the gate electrode 2 is IZO with a thickness of 300nm; the dielectric layer 3 is (PVP -co-PMF), with a thickness of 1000nm; the organic semiconductor layer 4 is P3HT, with a thickness of 35nm; the embedded small molecule additive 5 is TCAQ; the source electrode 6 and the drain electrode 7 are both Au, with a thickness of 100nm.

[0068] The preparation method is as follows:

[0069] 1. Thoroughly clean the substrate 1 on which the gate electrode IZO has been sputtered, and dry it with dry nitrogen after cleaning;

[0070] 2. Prepare a PVP-co-PMF film on the surface of IZO by spin coating to form a dielectric layer 3;

[0071] 3. Heat and bake the spin-coated PVP-co-PMF film to remove excess solvent;

[0072] 4. Prepare P3HT thin film on PVP-co-PMF by spin coating method to f...

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Abstract

The invention discloses an OTFT ammonia gas sensor embedded with a small molecule additive and a preparation method of the OTFT ammonia gas sensor. When the small molecule additive is arranged in an organic semi-conductor layer, a solution continuous processing method or a solid-state diffusion method is adopted, and therefore the OTFT ammonia gas sensor embedded with the small molecule additive at least containing one cyano group or fluoro group is obtained, wherein the solution continuous processing method is used for spin-coating or dip-coating the surface of the prepared organic semi-conductor film with an orthogonal solution containing the small molecule additive, and the solid-state diffusion method is used for coating the surface of the prepared organic semi-conductor film with thesmall molecule additive material through vacuum thermal evaporation. According to the OTFT ammonia gas sensor, the problem that an existing OTFT ammonia gas sensor is poor in stability is solved whilethe high sensitivity of the OTFT ammonia gas sensor is guaranteed.

Description

technical field [0001] The invention belongs to the field of gas sensors, and relates to an OTFT ammonia gas sensor embedded with small molecular additives and a preparation method thereof. Background technique [0002] Ammonia is a colorless weakly alkaline gas with a strong pungent smell. It is widely used in fields such as agricultural fertilizers, refrigeration systems, detergent manufacturing, and plastic synthesis, and has great application potential in the field of "carbon-free" energy. At the same time, the trace amount of ammonia latent in the human breath can reflect the health status of the body's kidneys and other parts, and has become an important biomarker in the emerging field of "non-invasive" medical diagnosis. However, because the molecules of ammonia gas are very small, it is easy to leak, and ammonia gas is highly toxic and corrosive, and it is easy to explode when exposed to an open flame. Therefore, once ammonia gas leaks, it will cause huge damage to p...

Claims

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Application Information

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IPC IPC(8): G01N27/26H01L51/05H01L51/40
CPCG01N27/26H10K10/488
Inventor 于军胜杨祖崇侯思辉尚乾程
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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