OTFT ammonia gas sensor embedded with small molecule additive and preparation method of OTFT ammonia gas sensor

A technology of ammonia sensor and additive, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve problems such as poor stability, achieve good stability, improve stability, and be easy to implement and promote.

Inactive Publication Date: 2019-01-25
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The object of the present invention is to overcome the poor stability of the existing OTFT ammonia sensor while ensuring high sensitivity throug

Method used

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  • OTFT ammonia gas sensor embedded with small molecule additive and preparation method of OTFT ammonia gas sensor
  • OTFT ammonia gas sensor embedded with small molecule additive and preparation method of OTFT ammonia gas sensor

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0057] Embodiment 1: A preferred embodiment of the present invention provides an OTFT ammonia sensor embedded with small molecule additives, such as figure 1 As shown, it is a bottom-gate top-contact structure. The materials and thicknesses of each layer of the device are: substrate 1 is glass; gate electrode 2 is ITO with a thickness of 200 nm; dielectric layer 3 is PMMA with a thickness of 500 nm; organic semiconductor layer 4 is P3HT with a thickness of 30 nm; the embedded small molecule additive 5 is TCNQ; the source electrode 6 and the drain electrode 7 are both Au and the thickness is 50 nm.

[0058] The preparation method is as follows:

[0059] 1. Thoroughly clean the substrate 1 on which the gate electrode ITO is sputtered, and dry it with dry nitrogen after cleaning;

[0060] 2. Using spin coating method to prepare PMMA film on the ITO surface to form a dielectric layer 3;

[0061] 3. Heat and bake the spin-coated PMMA film to remove excess solvent;

[0062] 4. Using spin coa...

Example Embodiment

[0065] Embodiment 2: A preferred embodiment of the present invention provides an OTFT ammonia sensor embedded with small molecule additives, such as figure 1 The bottom-gate top-contact structure is shown. The materials and thickness of each layer of the device are: substrate 1 is polytetrafluoroethylene; gate electrode 2 is ITO with a thickness of 200 nm; dielectric layer 3 is (PVP-co-PMF) , The thickness is 450nm; the organic semiconductor layer 4 is Tips-pentacene, the thickness is 35nm; the embedded small molecule additive 5 is F4TCNQ; the source electrode 6 and the drain electrode 7 are both Au and the thickness is 75nm.

[0066] The preparation method is the same as in Example 1.

Example Embodiment

[0067] Example 3: Such as figure 1 The bottom-gate top-contact structure is shown. The materials and thickness of each layer of the device are: substrate 1 is polyethylene terephthalate; gate electrode 2 is IZO with a thickness of 300 nm; dielectric layer 3 is (PVP -co-PMF) with a thickness of 1000 nm; the organic semiconductor layer 4 is P3HT with a thickness of 35 nm; the embedded small molecule additive 5 is TCAQ; the source electrode 6 and the drain electrode 7 are both Au and the thickness is 100 nm.

[0068] The preparation method is as follows:

[0069] 1. Thoroughly clean the substrate 1 on which the gate electrode IZO is sputtered, and dry it with dry nitrogen after cleaning;

[0070] 2. The PVP-co-PMF film is prepared on the surface of IZO by spin coating to form the dielectric layer 3;

[0071] 3. Heat and bake the spin-coated PVP-co-PMF film to remove excess solvent;

[0072] 4. Using spin coating method to prepare P3HT film on PVP-co-PMF to form organic semiconductor layer...

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Abstract

The invention discloses an OTFT ammonia gas sensor embedded with a small molecule additive and a preparation method of the OTFT ammonia gas sensor. When the small molecule additive is arranged in an organic semi-conductor layer, a solution continuous processing method or a solid-state diffusion method is adopted, and therefore the OTFT ammonia gas sensor embedded with the small molecule additive at least containing one cyano group or fluoro group is obtained, wherein the solution continuous processing method is used for spin-coating or dip-coating the surface of the prepared organic semi-conductor film with an orthogonal solution containing the small molecule additive, and the solid-state diffusion method is used for coating the surface of the prepared organic semi-conductor film with thesmall molecule additive material through vacuum thermal evaporation. According to the OTFT ammonia gas sensor, the problem that an existing OTFT ammonia gas sensor is poor in stability is solved whilethe high sensitivity of the OTFT ammonia gas sensor is guaranteed.

Description

technical field [0001] The invention belongs to the field of gas sensors, and relates to an OTFT ammonia gas sensor embedded with small molecular additives and a preparation method thereof. Background technique [0002] Ammonia is a colorless weakly alkaline gas with a strong pungent smell. It is widely used in fields such as agricultural fertilizers, refrigeration systems, detergent manufacturing, and plastic synthesis, and has great application potential in the field of "carbon-free" energy. At the same time, the trace amount of ammonia latent in the human breath can reflect the health status of the body's kidneys and other parts, and has become an important biomarker in the emerging field of "non-invasive" medical diagnosis. However, because the molecules of ammonia gas are very small, it is easy to leak, and ammonia gas is highly toxic and corrosive, and it is easy to explode when exposed to an open flame. Therefore, once ammonia gas leaks, it will cause huge damage to p...

Claims

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Application Information

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IPC IPC(8): G01N27/26H01L51/05H01L51/40
CPCG01N27/26H10K10/488
Inventor 于军胜杨祖崇侯思辉尚乾程
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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