A kind of double perovskite flexible ferroelectric film and its preparation method

Abstract

The invention discloses a double perovskite flexible ferroelectric film and a preparation method thereof, belongs to the technical field of electronic functional materials and devices, and the ferroelectric thin film has the general chemical formula of Bi2FeMo0. 7Ni0. 3O6 material. The invention searches for a suitable metal foil (nickel foil) flexible substrate and designs a double perovskite flexible ferroelectric thin film with a vertical structure; The flexible substrate has the advantages of good ductility and low cost, which is conducive to the realization of the production process of the coil-to-coil of the flexible battery, and has more economic value for the large-scale continuous production of the battery; The invention can obtain flexible double perovskite ferroelectric thin film with good stability, good photovoltaic performance and photoelectric conversion efficiency, and the research has important scientific value and research significance for the development and application of novel photoelectronics and photovoltaic materials.

Description

technical field [0001] The invention specifically relates to a double perovskite flexible ferroelectric thin film and a preparation method thereof, belonging to the technical field of electronic functional materials and devices. Background technique [0002] In today's society, human beings have a great desire for energy, but the problem they face is the high pollution caused by the consumption of traditional fossil energy. Therefore, people urgently need new green energy to replace traditional non-renewable energy. To solve the problems of energy shortage and environmental pollution; the development and utilization of renewable and clean energy has become an important way to solve traditional energy problems; solar energy is an inexhaustible clean energy with unique advantages and huge development potential Utilization potential; Solar photovoltaic power generation technology can directly convert solar energy into electrical energy, which is an important form of solar energ...

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Problems solved by technology

[0004] The invention patent with application number CN201710931620.0 discloses a Bi 2 FeMo 1-x Ni x o 6 Double perovskite ferroelectric thin film and its fabrication method, wherein Bi 2 FeMo 1-x Ni x o 6 The double perovskite ferroelectric film is based on the hard material Si. The Si substrate does not have obvious ductility and is prone to brittle fracture. The production process is complicated and the manufacturing cost is high. Depositing an oxide film on it has great potential. Large application limitations, especially difficult to obtain application on flexible devices; the patent of the present invention relates to a flexible ferroelectric photovoltaic material: Bi 2 FeMo 0.7 Ni 0.3 o 6 Deposited on a flexible nickel foil substrate; this flexible thin-film solar material has good flexibility and can maintain stable photovoltaic performance under multiple cycles of bending, while being lightweight, high mechanical stability and low manufacturing cost It is expected to be applied in flexible solar cells and flexible electronic devices. At present, the main difficulty in the preparation of flexible ferroelectric photovoltaic materials is the heterogeneous integration of thin films and flexible substrate materials. Photovoltaic parameters such as photocurrent and photovoltage, especially the stability of photovoltaic performance after cyclic bending, greatly limit the development and application of flexible ferroelectric photovoltaic thin film materials; therefore, the flexible ferroelectric photovoltaic film materials involved in the patent of the present invention Materials and preparation technologies have important research significance for flexible solar cells and devices

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