Semiconductor device and manufacturing method thereof

Abstract

The invention provides a semiconductor device and a manufacturing method thereof, and relates to the technical field of semiconductors. According to the semiconductor device manufactured via the manufacture method, an insulating layer is arranged between a substrate and an epitaxial layer manufactured later, the insulating layer can effectively inhibit doping in the silicon substrate in the nitride epitaxial growth process, and thus, free carriers introduced into the silicon substrate are reduced, response to electric signals of the epitaxial structure of the silicon substrate is reduced greatly, and the parasitic capacitance of the device is reduced greatly. The insulating layer can also inhibit leakage current through the silicon substrate in the device effectively. A nitride semiconductor layer is grown by taking the substrate in an opening of the insulating layer as the nucleation center, and the nitride semiconductor layer has a higher crystal quality.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] Group III nitride semiconductor is an important semiconductor material, mainly including AlN, GaN, InN and compounds of these materials such as AlGaN, InGaN, AlInGaN and so on. III / V compound semiconductors have broad applications in light emitting devices, power electronics, radio frequency devices and other fields. [0003] An important device type of III-nitride semiconductors are III-nitride high electron mobility transistors (HEMTs) and Schottky diodes, which have great prospects in the field of power semiconductors. Since gallium nitride bulk materials are extremely expensive, an economical approach is to epitaxially grow nitride semiconductor materials on heterogeneous substrates and fabricate device structures such as electrodes. Common substrate materials are alumina...

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Problems solved by technology

Moreover, the silicon substrate has a certain conductivity, and the breakdown electric field strength is low, which leads to a large leakage current between the silicon substrate and the drain of the HEMT or the anode of the Schottky diode.

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