Semiconductor device and manufacturing method thereof

Abstract

The invention provides a semiconductor device and a manufacturing method thereof, which relate to the technical field of semiconductors. In the semiconductor device manufactured by the manufacturing method in the embodiment of the present application, there is an insulating layer between the substrate and the subsequent epitaxial structure, and the insulating layer can effectively suppress the doping of the silicon substrate during the nitride epitaxial growth process, thereby Reduce the free carriers introduced into the silicon substrate, greatly reduce the electrical signal response of the silicon substrate on the epitaxial structure, and greatly reduce the parasitic capacitance of the device. At the same time, the insulating layer can effectively suppress the leakage current through the silicon substrate in the device. In addition, the nitride semiconductor layer in the present application is obtained by growing the substrate in the opening on the insulating layer as a nucleation center, so that the nitride semiconductor layer has better crystal quality.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] Group III nitride semiconductor is an important semiconductor material, mainly including AlN, GaN, InN and compounds of these materials such as AlGaN, InGaN, AlInGaN and so on. III / V compound semiconductors have broad applications in light emitting devices, power electronics, radio frequency devices and other fields. [0003] An important device type of III-nitride semiconductors are III-nitride high electron mobility transistors (HEMTs) and Schottky diodes, which have great prospects in the field of power semiconductors. Since gallium nitride bulk materials are extremely expensive, an economical approach is to epitaxially grow nitride semiconductor materials on heterogeneous substrates and fabricate device structures such as electrodes. Common substrate materials are alumina...

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Problems solved by technology

Moreover, the silicon substrate has a certain conductivity, and the breakdown electric field strength is low, which leads to a large leakage current between the silicon substrate and the drain of the HEMT or the anode of the Schottky diode.

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