Single crystal furnace with multiple safety protection

Abstract

The invention relates to a single crystal furnace with multiple safety protection. The single crystal furnace comprises a lower furnace chamber, a furnace cover, an isolating valve, an auxiliary chamber, an upper transmission mechanism, a water-cooled hot screen installed in the lower furnace chamber, a flow guide cylinder, a flow guide cylinder lifting device, a quartz crucible and a lower transmission mechanism, and further comprises a contact liquid contact system, a weighing system, a CCD monitoring system, and an isolating valve safety monitoring system. The contact liquid contact systemis capable of detecting abnormal operation of an excessive high silicon liquid level and warning. The crucible is automatically descended by the system in a high speed, and the water-cooled hot screenis lifted at the same time, so that a water leakage accident is avoided. The weighing system is capable of uploading and detecting a weight of a pulled silicon rod in real time in a crystal pulling process, when the weight of the silicon rod is suddenly increased or suddenly decreased in an instant moment, the system stops operating, and an alarm is sent. The CCD monitoring system is capable of monitoring abnormal change of a liquid level position in the quartz crucible and warning. The isolating valve safety monitoring system is capable of monitoring a position of the crystal rod, and improving opening-closing safety protection of a valve plate.

Description

technical field [0001] The invention relates to a single crystal furnace, in particular to a single crystal furnace with multiple safety protections. Background technique [0002] The single crystal furnace is a kind of equipment that melts polycrystalline materials such as polycrystalline silicon with a graphite heater in an inert gas (mainly nitrogen and helium) environment, and grows a single crystal without dislocation by the Czochralski method. It mainly includes upper transmission, auxiliary chamber, isolation valve, furnace cover, furnace cylinder, base frame, crucible lower transmission device, etc. In the prior art, single crystal silicon is prepared by a process combining the Czochralski method and the zone melting method. The crystal pulling process is a process in which a liquid is transformed into a solid state, and a large amount of heat needs to be released. Slow heat dissipation will affect the crystallization speed of the crystal. Therefore, the heat must b...

AI Technical Summary

Problems solved by technology

Among them, the temperature of the silicon liquid in the quartz crucible is as high as 1400 degrees. During the crystal pulling process, when there is a sudden change in the liquid level of the single crystal, abnormal movement of the lower drive, and the guide tube, the liquid level of the silicon liquid is too high, submerging the guide tube, and then Submerge the water-cooled heat shield, and the high-temperature silicon liquid will instantly burn the water-cooled heat shield, resulting in serious water leakage accidents. Therefore, in order to avoid accidents, it is necessary to set up corresponding safety protection measures

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