Unlock instant, AI-driven research and patent intelligence for your innovation.

Sapphire crystal growing furnace with spare seed crystals and crystal seeding method thereof

A sapphire crystal and growth furnace technology, applied in crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of high operation requirements, heavy workload, disturbance, etc., and achieve low labor intensity, time saving and high safety Effect

Active Publication Date: 2019-02-05
TDG YINXIA NEW MATERIAL CO LTD
View PDF8 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, although the auxiliary furnace chamber is set, operations such as cooling, opening, reinstalling the seed crystal, closing the auxiliary furnace chamber, and vacuuming the auxiliary furnace chamber are still required. For the technicians, the workload is also large and the operation requirements are also high Higher; when replacing the seed crystal, the internal thermal field of the crystal growth furnace is easily affected by the opening and closing of the electric baffle valve, which will cause disturbances, resulting in changes in the temperature gradient of the internal melt and affecting product performance; the temperature in the main furnace body is as high as 2050 When the temperature is lower than ℃, replacing the seed crystal in the auxiliary furnace chamber on the top will pose a hidden danger to the safety of technicians

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Sapphire crystal growing furnace with spare seed crystals and crystal seeding method thereof
  • Sapphire crystal growing furnace with spare seed crystals and crystal seeding method thereof
  • Sapphire crystal growing furnace with spare seed crystals and crystal seeding method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] The seeding method of the above-mentioned sapphire crystal growth furnace carrying a spare seed crystal, the steps are as follows:

[0043] first step, such as figure 1Shown: Before seeding starts, set the rotating device 1 to be fixed horizontally, install the main seed crystal 5 and the spare seed crystal 9, and adjust the height difference between the plane where the lower end of the main seed crystal 5 is located and the plane where the lower end of the spare seed crystal 9 is located less than 0.2cm, to ensure that the error between the set value and the actual movement value of the main seed crystal 5 up and down during seeding is within a controllable range, which is convenient for the exchange and use of the main seed crystal 5 and the spare seed crystal 9, and at the same time the control system Data such as distance and weight are cleared;

[0044] The second step, such as figure 2 , image 3 Shown: At the beginning of seeding, use the position control dev...

Embodiment 2

[0049] The situation of "alternative melting and crystallization at the end" described in the fourth step of the above-mentioned embodiment 1 does not meet the set conditions, such as excessive melting or blown of the seed crystal, at this time, it is necessary to use the spare seed crystal, which means seeding failure Case. like Figure 4 to Figure 6 As shown, this embodiment is a method for using a spare seed crystal in a sapphire crystal growth furnace carrying a spare seed crystal in the present invention, and the specific steps are as follows:

[0050] The first step is to operate the up and down stroke mechanism 3 to control the rotation device 1, the main connecting rod 4, the main seed crystal 5, the spare connecting rod 8 and the spare seed crystal 9 to move vertically upward as a whole until the main seed crystal 5 leaves the main furnace cavity 7 and Make it stay in the auxiliary furnace chamber 6 above the main furnace chamber 7;

[0051] In the second step, use ...

Embodiment 3

[0057] like Figure 7 As shown, on the basis of the above-mentioned embodiment 2, a sealing control device 11 between the main furnace chamber 7 and the auxiliary furnace chamber 6 is further added. The main function of this device is to ensure the working space of the main seed crystal 5 and the spare seed crystal 9 They are completely independent, and can clear the control system when the main seed crystal 5 and the spare seed crystal 9 are seeded respectively.

[0058] In the implementation process of actually using the spare seed crystal 9, after the positions of the main seed crystal 5 and the spare seed crystal 9 are exchanged, the main furnace chamber 7 and the auxiliary furnace chamber 6 can be sealed and isolated by the sealing control device 11, and then the control system can be cleared. The historical distance and weight data are set as initial values, and no fine-tuning actions are required or reduced in the final realization of seeding, which improves the success...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a sapphire crystal growing furnace with spare seed crystals. The sapphire crystal growing furnace comprises a main furnace cavity, an auxiliary furnace cavity right above the main furnace cavity, a seed crystal lifting system and a control system in the auxiliary furnace cavity, wherein the seed crystal lifting system comprises a rotation apparatus, a position manipulationapparatus of a main connecting rod, a position manipulation apparatus of a spare connecting rod, a vertical stroke mechanism, a main connecting rod, a main seed crystal, a spare connecting rod and a spare seed crystal; the rotation apparatus is arranged on the top end of the vertical stroke mechanism, two rectilinear opposite ends of the rotation apparatus are respectively provided with the main connecting rod, the main crystal seed connected onto the main connecting rod, the spare connecting rod and the spare seed crystal connected onto the spare connecting rod, and the main seed crystal andthe spare seed crystal are respectively used for seeding the crystals. The invention also provides a crystal seeding method of the sapphire crystal growing furnace with the spare seed crystals. The growing furnace of the invention is simple in procedures, easy in operation, capable of saving time and energy, high in safety of technicians, low in labor intensity, and suitable for various types of sapphire crystal growing furnace.

Description

Technical field: [0001] The invention relates to the field of crystal growth equipment, in particular to a sapphire crystal growth furnace with spare seed crystals and a seeding method thereof. Background technique: [0002] The sapphire crystal growth furnace is an important crystal growth equipment in the LED industry chain. The core function of this equipment is to generate high temperature to melt the aluminum oxide raw material in the crucible, and use seeding, cooling and other operations to make the raw material undergo crystal phase transformation to form a single crystal. crystal. [0003] At present, the Kyropoulos method for sapphire crystal growth is one of the mainstream methods suitable for growing large-sized sapphire single crystals. This method includes a seeding process, and the core component of the seeding process is the seed crystal. Usually, the seeding process includes the following steps: (1) Set the melting temperature to 2050 °C and time until the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B17/00C30B29/20
CPCC30B17/00C30B29/20
Inventor 丁钰明常慧石天虎尚吉龙滕斌康森苏艳芳冉金平
Owner TDG YINXIA NEW MATERIAL CO LTD