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Short channel trench power MOSFET

A trench and channel region technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as short-channel effects of power MOSFETs

Active Publication Date: 2019-02-05
HITACHI ENERGY SWITZERLAND AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the power MOSFET disclosed in US 8476697 B1 suffers from short channel effects and high subthreshold slope

Method used

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  • Short channel trench power MOSFET
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  • Short channel trench power MOSFET

Examples

Experimental program
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Effect test

Embodiment Construction

[0028] exist figure 1 A cross-sectional view of a power semiconductor device according to an embodiment of the present invention is shown in . figure 2 show figure 1 the enlarged part. A power semiconductor device according to an embodiment of the present invention is a trench power metal oxide semiconductor field effect transistor (MOSFET) 1 . It comprises a silicon carbide (SiC) wafer 2 with a first main side 3 and a second main side 4 . Throughout this specification, the term "silicon carbide" may refer to any polytype of silicon carbide, in particular it may refer to 4H-SiC or 6H-SiC. In order from the first main side 3 to the second main side 4, the SiC wafer 2 comprises n + Doped source layer 5, p-doped body layer 6, n - doped drift layer 7 and n + Doped drain layer 8 . The drift layer 7 and the drain layer 8 form an n-doped substrate layer 9 . The source layer 5 is separated from the drift layer 7 by the bulk layer 6 and the bulk layer 6 is separated from the...

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PUM

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Abstract

It is an object of the invention to provide a power semiconductor device having a low on-state resistance while avoiding any short channel effects and having a low subthreshold slope. To attain this object the invention provides a trench power semiconductor device, which comprises a compensation layer (15) of a first conductivity type, wherein the compensation layer (15) is extending on a gate insulation layer (11) between a source layer (5) of the first conductivity type and a substrate layer (9) of the first conductivity type directly adjacent to a channel region of a second conductivity type, and wherein an inequation is illustrated. In the above inequation, Lch is a channel length, [epsilon]CR is a permittivity of the channel region, [epsilon]GI is a permittivity of the gate insulationlayer, tC0MP is a thickness of the compensation layer (15) and tGI is a thickness of the gate insulation layer (11).

Description

technical field [0001] The present invention relates to short-channel trench power MOSFETs and to methods for manufacturing short-channel trench power MOSFETs. Background technique [0002] A silicon carbide trench gate transistor is known from US 2014 / 0159053 A1 comprising an n-type drain region, an n-type drift region formed on the n-type drain region, a p-type drift region formed on the n-type drift region A base region, an n-type source region formed on the p-type base region, a gate trench, and an n-type embedded in the base region below the source region and on sidewalls of the gate trench channel area. The embedded channel region is described as having a thickness of 30 to 80 nm. [0003] A semiconductor device is known from US 2014 / 0110723 A1, comprising: a semiconductor substrate; a first silicon carbide semiconductor layer located on a main surface of the semiconductor substrate, the first silicon carbide semiconductor layer comprising a drift region of a first c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L21/336
CPCH01L21/047H01L21/2236H01L29/4236H01L29/66068H01L29/7828H01L29/0623H01L29/1608H01L21/02378H01L21/02529H01L21/0262H01L21/02634H01L21/0475H01L21/049H01L29/0865H01L29/1033H01L29/1079H01L29/1095H01L29/36H01L29/66734H01L29/7813
Inventor R.米娜米萨瓦L.诺勒
Owner HITACHI ENERGY SWITZERLAND AG