All-solid-state photon enhanced thermionic emitter

A technology of emitting devices and thermal electrons, which is applied in the field of solar energy utilization, can solve the problems of low temperature stability of surface coatings with low work function, unstable surface coatings, etc., to eliminate space charge effects, reduce device process difficulty, increase The effect of large device efficiency

Inactive Publication Date: 2019-02-12
王晓花
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  • Claims
  • Application Information

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Problems solved by technology

However, the temperature stability of the low work function surface coatings (common such as alkali metals and alkali metal-based compounds)

Method used

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  • All-solid-state photon enhanced thermionic emitter
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  • All-solid-state photon enhanced thermionic emitter

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[0019] The invention is based on the photon-enhanced thermionic emission (PETE) principle, and at the same time overcomes the shortcomings of the PETE technology based on the vacuum gap layer, belongs to an all-solid-state photon-enhanced thermionic emission device, and is a new type of photo-thermoelectric composite device.

[0020] Figure 5 The schematic diagram of the structure of the all-solid-state photon enhanced thermionic emission device of the present invention is shown. The photon (203) is incident from above. The device from top to bottom includes: a transparent conductive oxide TCO layer (501), a heavily doped BSF layer (401), a cathode absorption layer (201), a highly conductive and highly thermally insulating semiconductor Layer (502) and anode (202). The TCO layer is P-type or N-type transparent conductive oxide. The high-low junction structure of the back surface field passivation layer and the cathode absorption layer is composed of P+-GaAs / P-GaAs. The highly ...

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Abstract

The invention belongs to the field of solar energy utilization, relates to a novel photo-thermo-electric composite device and discloses an all-solid-state photon enhanced thermionic emitter. The emitter comprises a transparent conductive oxide layer, a back surface field passivation layer, a cathode absorption layer, a high-conductivity high-thermal-insulation semiconductor material layer and an anode sequentially from top to bottom, wherein the back surface field passivation layer is used for reducing carrier recombination, the cathode absorption layer is used for absorbing sunlight, and theanode is used for collecting electrons. By combination of dual functions of photo-induced electron and thermionic emission, high energy conversion efficiency can be obtained as compared with that of single photovoltaic cells or thermionic emitters. By insertion of the high-conductivity high-thermal-insulation layer between a cathode and the anode of the all-solid-state PETE (photon enhanced thermionic emitter), compared with a conventional vacuum gap layer based photon enhanced thermionic emitter, the all-solid-state photon enhanced thermionic emitter has advantages of low process difficulty,elimination of space charge effects and high efficiency improvement based on energy level matching.

Description

technical field [0001] The invention relates to a novel photothermoelectric composite device, which belongs to the field of solar energy utilization. Background technique [0002] At present, the energy loss caused by the mismatch between the energy band structure of the absorbing layer material and the solar spectrum in conventional photovoltaic cell devices accounts for about 50% of the overall spectral energy, and this part of the lost energy is eventually dissipated in the form of heat. Technologies such as split-spectrum photovoltaic cells and multi-junction solar cells reduce this loss by improving the matching degree of the energy band structure of the absorbing layer with the solar spectrum. However, the cost of multi-cell photovoltaic cells with split-spectrum photovoltaic cells is extremely high, and the device design and process are difficult, so it is difficult to promote in a large area. The hot carrier battery proposed in recent years can theoretically achieve...

Claims

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Application Information

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IPC IPC(8): H01L31/0304H01L31/032H01L35/18
CPCH01L31/0304H01L31/032H01L31/054H10N10/853Y02E10/544Y02E10/52
Inventor 王晓花
Owner 王晓花
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