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An all-solid-state photon-enhanced thermionic emission device

A technology of emitting devices and thermal electrons, which is applied in the field of solar energy utilization, can solve problems such as difficult thermal electron emission and low temperature stability of coatings, and achieve the effects of increasing device efficiency, improving space, and reducing device process difficulty

Inactive Publication Date: 2017-02-22
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology

Therefore, PETE devices based on the vacuum gap layer rely too much on the work function of the cathode and anode, and are limited by the low temperature stability of the cathode low work function coating, so it is difficult to truly realize the advantages of thermionic emission at high temperatures.

Method used

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  • An all-solid-state photon-enhanced thermionic emission device
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  • An all-solid-state photon-enhanced thermionic emission device

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Embodiment Construction

[0019] The invention is based on the principle of photon enhanced thermal electron emission (PETE), and at the same time overcomes the shortcomings of the PETE technology based on the vacuum gap layer.

[0020] Figure 5 A schematic structural diagram of the all-solid-state photon-enhanced thermionic emission device of the present invention is shown. Photons (203) are incident from above, and the device includes, from top to bottom, a transparent conductive oxide TCO layer (501), a heavily doped BSF layer (401), a cathode absorption layer (201), a semiconductor with high electrical conductivity and high thermal insulation layer (502) and anode (202). The TCO layer is a P-type or N-type transparent conductive oxide. The high and low junction structure of the back surface field passivation layer and the cathode absorption layer is composed of P+-GaAs / P-GaAs. The high conductivity and high thermal insulation semiconductor material layer can not only realize charge transport bu...

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Abstract

The invention relates to a novel photothermoelectric composite device, which belongs to the field of solar energy utilization. An all-solid-state photon-enhanced thermionic emission device is disclosed. The device includes from top to bottom: a transparent conductive oxide layer, a back surface field passivation layer for reducing carrier recombination, a cathode absorber layer for absorbing sunlight, a high conductivity and high thermal insulation semiconductor material layer and a An anode that collects electrons. By combining the dual functions of photo-generated electrons and thermal electron emission, the device can obtain higher energy conversion efficiency than a single photovoltaic cell or thermal electron emission device. The all-solid-state PETE device inserts a high-conductivity and high-insulation layer between the cathode and the anode. Compared with the conventional photon-enhanced thermionic emission device based on the vacuum gap layer, its process difficulty is small, the space charge effect is eliminated, and the energy level can be matched. Realize the improvement of efficiency in a larger space.

Description

technical field [0001] The invention relates to a novel photothermal-electric composite device, which belongs to the field of solar energy utilization. Background technique [0002] At present, the energy loss caused by the mismatch between the energy band structure of the absorber layer material and the solar spectrum in conventional photovoltaic cell devices accounts for about 50% of the overall spectral energy, and this part of the energy loss is ultimately dissipated in the form of heat. Technologies such as split-spectrum photovoltaic cells and multi-junction solar cells reduce this loss by improving the matching of the energy band structure of the absorber layer to the solar spectrum. However, the cost of multi-cell sub-spectrum photovoltaic cells is extremely high and the device design and process are difficult, making it difficult to popularize in a large area. The hot carrier battery proposed in recent years can achieve high efficiency close to the multi-junction b...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0525
CPCY02E10/50
Inventor 向勇周海平张晓琨刘俊迪常小幻
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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