Organic field-effect multilevel transistor memory on basis of light regulation and control and method for preparing organic field-effect multilevel transistor memory

Abstract

The invention discloses an organic field-effect multilevel transistor memory on the basis of light regulation and control. The organic field-effect multilevel transistor memory sequentially comprisesa substrate, a gate insulation layer, a quantum dot doped thin film layer, a photosensitive semiconductor layer and source and drain electrodes from bottom to top. The source and drain electrodes areformed on the photosensitive semiconductor layer; the quantum dot doped thin film layer is a polymer thin film with doped semiconductor nanometer crystals. The organic field-effect multilevel transistor memory has the advantages that the memory properties and the photosensitivity of devices can be improved by the aid of simple technological means, accordingly, the memory capacity and the photo-responsiveness of the devices can be greatly enhanced, the switch speeds of the devices can be greatly increased, and multilevel memory can be implemented, the preparation costs of the devices further can be reduced, and accordingly popularization and application can be facilitated.

Description

technical field [0001] The invention belongs to the field of memory technology and light detection technology in the semiconductor industry, and specifically relates to an organic field effect multi-stage transistor memory based on light control and a preparation method thereof. Background technique [0002] In the context of today's hot big data era, the rapid development of information technology has put forward higher requirements for data storage, such as storage speed, storage density, component size, mechanical flexibility, manufacturing process, and price and cost. The development trend of organic field effect transistor memories with high performance meets the above requirements. A large number of researchers start with the device structure of the organic field effect transistor memory, the material of each functional layer of the device, and the morphology of the film to control the performance of the organic field effect transistor memory. [0003] In recent years...

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Problems solved by technology

However, this method requires a larger operating voltage, wastes resources, and has potential safety hazards, which also limits its application in this area.

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