Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Light-emitting display device, etching method thereof, and display device

A technology to be etched and photoresist, applied in the direction of electrical solid device, semiconductor device, semiconductor/solid state device manufacturing, etc., can solve the decline of the electrical performance of the metal film layer, the decline of the film quality, and the impact on the yield and reliability of the device. and other problems, to enhance the effect of physical etching, reduce foreign matter, and enhance the effect of physical etching

Active Publication Date: 2020-08-25
YUNGU GUAN TECH CO LTD
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] When the existing chlorine-based gas is used to etch the metal layer in the OLED display device, the electrical properties of the metal film layer will decrease, and the quality of the subsequent film formation will decrease, which will seriously affect the yield and reliability of the device.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Light-emitting display device, etching method thereof, and display device
  • Light-emitting display device, etching method thereof, and display device
  • Light-emitting display device, etching method thereof, and display device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative efforts fall within the protection scope of the present invention.

[0030] When etching the Al and Ti metal layers in OLED display devices, chlorine-based etching gas is used for etching. The process conditions usually used are the flow rate of chlorine gas is 70sccm-80sccm, the etching pressure is 8mTorr, and the RF power supply The power is 800W, the power of the bias power is 140W, the temperature is 60°C, and the photores...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a light-emitting display device, an etching method thereof, and a display device, wherein the method includes: coating a photoresist on a metal film layer to be etched, exposing and developing; layer is etched; the preset etching conditions include: the etching gas includes boron trichloride with a flow rate greater than 60 sccm, the etching gas includes argon, and the power of the bias power supply is greater than or equal to at least one of 300W. Eclipse conditions. The above etching conditions can enhance physical etching, and enhanced physical etching can more effectively remove the etching by-products that grow on the etching sidewall after the reaction of chlorine and metal, so as to facilitate the filling of subsequent film layers and improve the electrical conductivity of the metal film layer. Performance and film quality of subsequent film layers, thereby improving product yield and reliability. The removal of sidewall by-products of the metal film layer can be further enhanced.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a light-emitting display device, an etching method thereof, and a display device. Background technique [0002] In the traditional OLED display field, chlorine-based gases are usually used to etch metal layers such as aluminum (Al) and titanium (Ti) in OLED display devices to achieve better etching effects. With the continuous emergence of new technologies and new layouts, the graphic density of products is gradually increasing, and the shape of lines is gradually becoming more and more complicated. [0003] When the existing chlorine-based gas is used to etch the metal layer in the OLED display device, the electrical properties of the metal film layer will decrease, and the quality of the subsequent film formation will decrease, seriously affecting the yield and reliability of the device. Contents of the invention [0004] In view of this, embodiments of the present inventio...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/308H01L51/56C23F1/12C23F1/02
CPCC23F1/02C23F1/12H10K71/00
Inventor 崔志远
Owner YUNGU GUAN TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com