High-quality Ga2O3 thin film and heterogeneous epitaxial preparation method thereof

A kind of heteroepitaxial, high-quality technology, used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as poor quality of heteroepitaxial crystals, improve crystal quality, lower prices, and overcome poor heat dissipation. Effect

Active Publication Date: 2019-02-15
JILIN UNIV
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0004] Purpose of the present invention is exactly to solve above-mentioned Ga 2 o 3 The problem of poor quality of heteroepitaxial crystals, providing a high-quality Ga 2 o 3 Thin film and its heteroepitaxial preparation method

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  • High-quality Ga2O3 thin film and heterogeneous epitaxial preparation method thereof
  • High-quality Ga2O3 thin film and heterogeneous epitaxial preparation method thereof

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Embodiment 1

[0017] A high quality Ga 2 o 3 Heteroepitaxial thin films with structures such as figure 1 As shown, the c-plane sapphire substrate 1, the epitaxially grown GaN-based multilayer structure film 2 on the c-plane sapphire substrate 1, and the low-temperature oxidized low-temperature Ga 2 o 3 Oxide layer 3, low temperature Ga 2 o 3 High temperature oxidized high temperature Ga on oxide layer 3 2 o 3 Oxide layer 4, high temperature Ga 2 o 3 High-quality Ga epitaxially grown on oxide layer 4 2 o 3 layer 5; characterized in that: the GaN multilayer structure film 2 is made of AlN-Al 1-x Ga x Composed of N-GaN multi-layer films with a total thickness of 1000nm, among which AlGaN is a composition gradient buffer layer, and the uppermost layer is a high-quality GaN film; low-temperature Ga 2 o 3 The oxide layer 3 is made by low-temperature thermal oxidation of the upper surface (GaN film) of the GaN-based multilayer structure film 2; 2 o 3 Oxide layer 4 is made of low tem...

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Abstract

The invention discloses a high-quality Ga2O3 thin film and a heterogeneous epitaxial preparation method thereof, and belongs to the technical field of semiconductor thin film material preparation. Themethod comprises the following steps of performing GaN thin film epitaxy on a c-surface sapphire by utilizing MOCVD to prepare a GaN / sapphire substrate; putting the GaN / sapphire substrate into a high-temperature oxidation furnace, pumping high-purity oxygen for 2-5hours at a temperature of 900-1,000 DEG C, and then heating to 1,100-1,200 DEG C and continuously pumping oxygen for 1-2h; then performing cooling to obtain a Ga2O3 / GaN / sapphire substrate; and carrying out continuous epitaxy of Ga2O3 on the Ga2O3 / GaN / sapphire substrate by utilizing MOCVD through a temperature gradual change epitaxial process to obtain the high-quality Ga2O3 thin film material. According to the method, the GaN thin film material is prepared into the Ga2O3 / GaN / sapphire substrate through a two-step thermal oxidization method, and epitaxy of the Ga2O3 thin film material is carried out through the temperature gradual change epitaxial process, so that the crystal quality of the Ga2O3 thin film can be remarkably improved. The method can be used for preparation of a Ga2O3 heterogeneous substrate device, and the process is simple and the production cost is low.

Description

technical field [0001] The invention belongs to the technical field of semiconductor thin film material preparation, in particular to a high-quality Ga 2 o 3 Thin film and its heteroepitaxial preparation method. Background technique [0002] Gallium oxide (Ga 2 o 3 ) is a direct bandgap wide bandgap semiconductor material, the most stable phase is monoclinic β-Ga 2 o 3 structure. β-Ga 2 o 3 (hereinafter referred to as Ga 2 o 3 ) compared with SiC and GaN materials: First, Ga 2 o 3 The forbidden band width is larger and the breakdown field strength is higher, which makes the material work in the mode of unipolar device at 3-4kV or even higher voltage. In addition, although Ga 2 o 3 The mobility is lower than that of GaN and SiC, but its high breakdown field strength can still increase its Baliga optimal value (∝μE br 3 ), making it beneficial to the fabrication of metal-oxide-semiconductor field-effect transistors (MOSFETs). Second, the theoretical value of t...

Claims

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Application Information

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IPC IPC(8): H01L21/02
CPCH01L21/02521
Inventor 董鑫张源涛李赜明张宝林李万程
Owner JILIN UNIV
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