A light emitting diode and its manufacturing method

Abstract

The invention discloses a light emitting diode. The light emitting diode includes an intrinsic GaN layer, the intrinsic GaN layer has apertures, and air can freely circulate through the apertures. Through manufacturing of the apertures through which air can freely circulate in the intrinsic GaN layer of the light emitting diode, heat generated by components during operation is naturally taken outof the components by utilizing the flowability of air; compared with the prior art, a heat conducting medium (i.e. air) of the light emitting diode is directly in contact with a heat producing part ofan LED component, and so, the heat dissipation efficiency is greatly improved, distribution of internal thermal stress of the component is more uniform, and the life of the LED is prolonged; at the same time, the recombination efficiency of electron and hole radiation in a quantum well structure is improved, that is, the luminous efficiency of a component increases; and at the same time, the light emitting diode achieves the purpose of heat dissipation by directly improving an epitaxial layer structure of the LED and does not need to add a new heat dissipation structure externally, thus reducing the production cost. The invention simultaneously provides a manufacturing method of the light emitting diode having the beneficial effects.

Description

technical field [0001] The invention relates to the field of semiconductor light emitting devices, in particular to a light emitting diode and a manufacturing method thereof. Background technique [0002] As the foundation of the optoelectronics industry, semiconductors have a great impact on the development of the optoelectronics industry. Semiconductor electronic devices have played an increasingly important role in social production practice, and GaN-based semiconductors are called the third-generation semiconductor materials following the first-generation Si and the second-generation GaAs. The third-generation semiconductor has the advantages of large band gap, fast electron drift, small dielectric constant, and good thermal conductivity. However, with the maturity of the third-generation semiconductor optoelectronic device technology, the problems to be overcome become more and more difficult. [0003] Generally speaking, whether the LED lamp works stably, whether the...

AI Technical Summary

Problems solved by technology

However, these technologies are not solved from the structure of the chip itself, the effect is not good, and new structures need to be added, which increases the cost of later production. Therefore, the internal heat of the light-emitting part of the component cannot be dissipated in time, forcing the temperature to rise, which will reduce the probability of electron and hole radiative recombination in the quantum well structure, that is, the luminous efficiency of the component will decrease.

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