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Induction coil structure and system for generating inductively coupled plasma

A technology for inductive coils and generation systems, applied in the field of ICP generation systems, can solve problems such as low plasma density and low discharge stability

Active Publication Date: 2019-03-01
EN2CORE TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the traditional inductor coil structure has low discharge stability and low plasma density

Method used

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  • Induction coil structure and system for generating inductively coupled plasma
  • Induction coil structure and system for generating inductively coupled plasma
  • Induction coil structure and system for generating inductively coupled plasma

Examples

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Embodiment Construction

[0049] A high voltage potential (3 kv or more) is applied in the dielectric discharge tube at low pressure (less than a few tens of Torr without fluid effects) in an antenna arranged around the dielectric discharge tube. In this case, plasma is generated in the dielectric discharge tube. The surface of the dielectric discharge tube is heated by ion collisions. Therefore, the dielectric discharge tube is heated to a temperature above 1000°C. This can lead to changes in the surface properties of the dielectric discharge tube or perforation of the dielectric discharge tube.

[0050] The high potential applied to the antenna is affected by the antenna's inductance, frequency and current. Under high power conditions, a high potential must be applied to the antenna. Therefore, it is necessary to reduce the high potential of the antenna.

[0051] According to some embodiments of the inventive concept, in the case of applying a high power of several kW or more, a method of reducin...

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PUM

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Abstract

A system for generating inductively coupled plasma (ICP) according to an embodiment of the present invention includes: a dielectric tube which extends in the length direction; a first induction coil structure which is disposed to enclose the dielectric tube and generates inductively coupled plasma in the dielectric tube; an RF power source which provides a positive output and a negative output having opposite phases, supplies respectively the positive output and the negative output of RF power to both terminals of the first induction coil structure, and changes a driving frequency; a first main capacitor disposed between a positive output terminal of the RF power source and one terminal of the first induction coil structure; and a second main capacitor disposed between a negative output terminal of the RF power source and the other terminal of the first induction coil structure. The first induction coil structure includes: induction coils which are connected in series and respectivelydisposed on different layers, and have at least one turn in each layer; and auxiliary capacitors which are respectively disposed between adjacent inductor coils so as to distribute voltages applied tothe induction coils.

Description

technical field [0001] The present invention relates to an inductively-coupled plasma (ICP: inductively-coupled plasma) generating system, and in particular, to an ICP generating system including a capacitor inserted between a plurality of antennas and having a voltage dividing structure. Background technique [0002] Plasmas are used in processes to etch substrates (eg, semiconductor wafers) or to deposit layers on substrates. Furthermore, plasmas are used for the synthesis of new materials, surface treatment and environmental purification. In addition, atmospheric pressure plasma is used in plasma scrubbers, cleaning, sterilization and skin care. [0003] To generate a conventional inductively coupled plasma (ICP), a dielectric discharge tube wound by an induction coil is used. However, the conventional inductive coil structure has low discharge stability and low plasma density. [0004] The present invention provides a novel inductive coil structure configured to stabl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32H01Q1/26H01Q1/52H05H1/46
CPCH01J37/3211H01Q1/26H01Q1/521H01J37/32174H01J37/321H05H1/4652
Inventor 严世勋李润星
Owner EN2CORE TECH INC
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