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Platinum metal loaded carbon nitride film, and preparation method and application thereof

A technology of carbon nitride and platinum metal, applied in the field of photocatalytic materials, can solve the problems of unsatisfactory photocatalytic performance of carbon nitride, small contact area between catalyst and pollutants, etc., and achieve excellent photocatalytic degradation activity and strong visible light absorption capacity , high catalyst activity

Active Publication Date: 2019-03-05
SHENYANG INST OF AUTOMATION GUANGZHOU CHINESE ACAD OF SCI +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In order to overcome the disadvantages and deficiencies of the small contact area between the catalyst and pollutants in the prior art and the unsatisfactory photocatalytic performance of carbon nitride, the primary purpose of the present invention is to provide a method for preparing a platinum metal-loaded carbon nitride film

Method used

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  • Platinum metal loaded carbon nitride film, and preparation method and application thereof
  • Platinum metal loaded carbon nitride film, and preparation method and application thereof
  • Platinum metal loaded carbon nitride film, and preparation method and application thereof

Examples

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Effect test

Embodiment 1

[0039] Put 10g of urea in the bottom of the crucible, place the nanoporous ceramic membrane on the top of the crucible, and calcine in a muffle furnace at a calcination temperature of 550°C, a holding time of 4 hours, and a heating rate of 2.0°C / min. Carbon nitride film of ceramic film; after natural cooling, soak the carbon nitride film in 100 mg / L chloroplatinic acid, take it out after ultrasonication for 5 minutes, and place it under a xenon lamp for 30 minutes, and dry it in an oven at 60 ° C to obtain high Platinum metal-loaded carbon nitride film with high water flux, stronger visible light absorption capacity and excellent photocatalytic degradation activity for aniline sewage. The prepared carbon nitride film was characterized by DRS, XRD, TGA, etc. The results are as follows: Figure 1 ~ Figure 3 shown.

Embodiment 2

[0041] Put 3g of DCDA and 0.07g of DPY in a conical flask, add 15mL of water, heat to 90°C, stir for 1 hour to a clear and transparent solution, transfer it to a petri dish, and dry it in a blast drying oven to obtain a precursor; After being ground into powder, 10 g was weighed and placed at the bottom of the crucible, and the nanoporous ceramic membrane was placed above the crucible, and calcined in a muffle furnace at a calcination temperature of 550°C, a holding time of 4 hours, and a heating rate of 2.0°C / min. A carbon nitride film loaded on a nanoporous ceramic membrane; after natural cooling, it was calcined again to 500°C, kept for 2 hours, and the heating rate was 5°C / min; the obtained carbon nitride film was immersed in 100mg / L of chloroplatinic acid, After ultrasonication for 5 minutes, take it out and irradiate it under a xenon lamp for 30 minutes, and dry it in an oven at 60°C to obtain high water flux, stronger visible light absorption capacity and excellent photo...

Embodiment 3

[0049] Put 10g of thiourea in the bottom of the crucible, place the nanoporous ceramic membrane on the top of the crucible, and calcined in a muffle furnace at a calcination temperature of 400°C, a holding time of 6 hours, and a heating rate of 5.0°C / min. Carbon nitride film of porous ceramic membrane; after natural cooling, immerse the carbon nitride film in 1 mg / L chloroplatinic acid, take it out after ultrasonication for 5 minutes, place it under a xenon lamp for 30 minutes, and dry it in an oven at 60°C to obtain Platinum metal-loaded carbon nitride film with high water flux, stronger visible light absorption capacity and excellent photocatalytic degradation activity for aniline sewage.

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Abstract

The invention belongs to the technical field of photocatalytic materials, and discloses a platinum metal loaded carbon nitride film, and a preparation method and an application thereof. The preparation method provided by the invention comprises the following steps: S1, placing a carbon nitride precursor into a crucible, and placing a carrier above the crucible; S2, calcining the crucible of the step S1 so as to obtain a graphite-phase carbon nitride film loaded on the carrier; and S3, impregnating the graphite-phase carbon nitride film obtained in the step S2 into a platinum-containing compound solution, and carrying out reducing so as to obtain a platinum metal loaded graphite-phase carbon nitride film with high water flux. According to the invention, through high-temperature evaporationcoating to the carbon nitride precursor, carbon nitride is uniformly coated onto the carrier, wherein cyanoguanidine and 2,6-diaminopyridine are preferably selected to form a precursor; and through animpregnation-reduction method, platinum metal particles are loaded onto the surface of a carbon nitride film to obtain the carbon nitride film with high water flux, stronger visible-light absorptioncapability and excellent photocatalytic degradation activity to aniline sewage, wherein the carbon nitride film can completely degrade aniline in one hour.

Description

technical field [0001] The invention belongs to the technical field of photocatalytic materials, and in particular relates to a carbon nitride film loaded with platinum metal, a preparation method and application thereof. Background technique [0002] The rapid development of modern industry is accompanied by serious environmental pollution problems. Therefore, the control and control of environmental pollution is of great significance to the development of the national economy and the realization of sustainable development strategies. Semiconductor photocatalysis technology has opened up a new way for human beings to develop and utilize solar energy. However, conventional TiO 2 Inorganic semiconductor-based photocatalysts have the disadvantages of low solar energy utilization rate, low photon quantum efficiency and easy deactivation, which seriously restrict the practical application of photocatalytic technology. The graphitic carbon nitride (g-C 3 N 4 ) has good chemi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J27/24C02F1/30C02F101/38
CPCC02F1/30B01J27/24B01J37/0201B01J37/082C02F2101/38B01J35/39
Inventor 陈志鸿孟庆国吕海钦苑明哲吕冬黄泽山
Owner SHENYANG INST OF AUTOMATION GUANGZHOU CHINESE ACAD OF SCI
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