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Silicon integrated low-optical loss magneto-optical thin film and preparation method thereof

A technology of optical loss and magneto-optic, applied in the direction of ion implantation plating, coating, metal material coating process, etc., can solve the problem of high loss of thin film materials

Active Publication Date: 2019-03-08
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology

[0005] In view of the above-mentioned problems or deficiencies, in order to solve the problem of high material loss of the existing silicon-integrated YIG / Ce:YIG film, the present invention provides a silicon-integrated low optical loss magneto-optical film and its preparation method, through film thickness, deposition Atmosphere and diffusion barrier process, significantly reducing the optical loss of this type of oxide thin film silicon integration

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  • Silicon integrated low-optical loss magneto-optical thin film and preparation method thereof
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  • Silicon integrated low-optical loss magneto-optical thin film and preparation method thereof

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Embodiment Construction

[0020] The present invention will be further elaborated below in conjunction with the embodiments and the accompanying drawings.

[0021] In order to accurately measure the optical loss of the thin film, the SOI substrate is patterned. The surface of the SOI substrate is cleaned with an organic solvent and deionized water, and the organic solvent includes acetone and ethanol. After exposure, development, and etching in sequence, a preset pattern such as figure 1 shown.

[0022] In order to obtain the underlying Si waveguide pattern and the cladding window pattern, two exposures, development, and etching are used. After exposure, development and etching for the first time, a Si waveguide pattern is obtained. After exposure, development and etching for the second time, a window pattern is formed on the waveguide.

[0023] Step 1: Deposit a layer of 10nm thick SiO on the SOI waveguide by sputtering 2 film. The sputtering power is 80W, the deposition rate is 1nm / min, the atm...

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Abstract

The invention belongs to the technical field of growth of magnetic oxide thin films, in particular to a silicon integrated low-optical loss magneto-optical thin film and a preparation method thereof.According to the preparation method, an SiO2 diffusion barrier layer is deposited on a substrate to prevent the subsequently grown YIG and Ce:YIG thin film and Si of the substrate against being diffused mutually, and meanwhile, the crystallization performance of YIG and Ce:YIG materials and the mode field distribution of the device are not affected; and the YIG thin film with the thickness of 50-60 nm is reduced, so that the loss is reduced. The finally prepared silicon integrates the YIG / Ce: YIC thin film materials, the loss of the YIG thin film is 100-150 dB / cm, and the loss of the Ce:YIG thin film is 50-80 dB / cm. The method provides great helps for improving the material magneto-optical figure of merit and developing a low-loss silicon-based optical isolation device.

Description

technical field [0001] The invention belongs to the technical field of growing magnetic oxide thin films, and in particular relates to a silicon integrated low optical loss magneto-optical thin film and a preparation method thereof. Background technique [0002] Rare earth doped yttrium iron garnet (Y 3 Fe 5 o 12 , YIG) thin films have high magneto-optical effect and low optical loss at near-infrared communication wavelengths, and are currently the core materials used in integrated non-reciprocal optical devices. In previous reports, a two-step growth method using a YIG seed layer can achieve polycrystalline Ce 1 Y 2 Fe 5 o 12 (Ce:YIG) film is prepared on a semiconductor substrate, but the Faraday rotation optical constant of the material is 30%-80% lower than that of the epitaxial film, and the optical loss is 2-10 times higher than that of the epitaxial film. One is that there is a large lattice mismatch between YIG and rare earth doped YIG films and semiconductor s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/10C23C14/28C23C14/08C23C14/58
CPCC23C14/08C23C14/10C23C14/28C23C14/34C23C14/5806
Inventor 毕磊张燕刘书缘肖敏邓龙江
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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