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A kind of silicon integrated low optical loss magneto-optical film and preparation method thereof

An optical loss, magneto-optical technology, applied in vacuum evaporation coating, coating, sputtering and other directions, can solve the problem of high loss of thin film materials

Active Publication Date: 2020-12-29
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology

[0005] In view of the above-mentioned problems or deficiencies, in order to solve the problem of high material loss of the existing silicon-integrated YIG / Ce:YIG film, the present invention provides a silicon-integrated low optical loss magneto-optical film and its preparation method, through film thickness, deposition Atmosphere and diffusion barrier process, significantly reducing the optical loss of this type of oxide thin film silicon integration

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  • A kind of silicon integrated low optical loss magneto-optical film and preparation method thereof
  • A kind of silicon integrated low optical loss magneto-optical film and preparation method thereof
  • A kind of silicon integrated low optical loss magneto-optical film and preparation method thereof

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Embodiment Construction

[0020] The present invention will be further elaborated below in conjunction with the embodiments and the accompanying drawings.

[0021] In order to accurately measure the optical loss of the thin film, the SOI substrate is patterned. The surface of the SOI substrate is cleaned with an organic solvent and deionized water, and the organic solvent includes acetone and ethanol. After exposure, development, and etching in sequence, a preset pattern such as figure 1 shown.

[0022] In order to obtain the underlying Si waveguide pattern and the cladding window pattern, two exposures, development, and etching are used. After exposure, development and etching for the first time, a Si waveguide pattern is obtained. After exposure, development and etching for the second time, a window pattern is formed on the waveguide.

[0023] Step 1: Deposit a layer of 10nm thick SiO on the SOI waveguide by sputtering 2 film. The sputtering power is 80W, the deposition rate is 1nm / min, the atm...

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Abstract

The invention belongs to the technical field of growing magnetic oxide thin films, and in particular relates to a silicon integrated low optical loss magneto-optical thin film and a preparation method thereof. The present invention deposits a layer of SiO on the substrate 2 Diffusion barrier layer to prevent the subsequent growth of YIG and Ce:YIG films from interdiffusion with the Si of the substrate, while not affecting the crystallization properties of YIG, Ce:YIG materials and the mode field distribution of devices; and by selecting 50‑60nm thick YIG film to reduce loss. The finally prepared silicon-integrated YIG / Ce:YIG film material has a loss of 100-150dB / cm for the YIG film and a loss of 50-80dB / cm for the Ce:YIG film. It is of great help to improve the magneto-optical figure of merit of materials and develop low-loss silicon-based optical isolation devices.

Description

technical field [0001] The invention belongs to the technical field of growing magnetic oxide thin films, and in particular relates to a silicon integrated low optical loss magneto-optical thin film and a preparation method thereof. Background technique [0002] Rare earth doped yttrium iron garnet (Y 3 Fe 5 o 12 , YIG) thin films have high magneto-optical effect and low optical loss at near-infrared communication wavelengths, and are currently the core materials used in integrated non-reciprocal optical devices. In previous reports, a two-step growth method using a YIG seed layer can achieve polycrystalline Ce 1 Y 2 Fe 5 o 12 (Ce:YIG) film is prepared on a semiconductor substrate, but the Faraday rotation optical constant of the material is 30%-80% lower than that of the epitaxial film, and the optical loss is 2-10 times higher than that of the epitaxial film. One is that there is a large lattice mismatch between YIG and rare earth doped YIG films and semiconductor s...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34C23C14/10C23C14/28C23C14/08C23C14/58
CPCC23C14/08C23C14/10C23C14/28C23C14/34C23C14/5806
Inventor 毕磊张燕刘书缘肖敏邓龙江
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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