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Semiconductor device, manufacturing method thereof, and electronic equipment including the same

A semiconductor and device technology, applied in the field of vertical semiconductor devices and their manufacturing, can solve the problems of lack of effective application of strain engineering methods, and achieve the effects of improving device performance, eliminating offset, and reducing occupied area

Active Publication Date: 2022-04-19
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, there is a lack of means to effectively apply strain engineering in vertical devices

Method used

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  • Semiconductor device, manufacturing method thereof, and electronic equipment including the same
  • Semiconductor device, manufacturing method thereof, and electronic equipment including the same
  • Semiconductor device, manufacturing method thereof, and electronic equipment including the same

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Embodiment Construction

[0016] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concepts of the present disclosure.

[0017] Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are not to scale, some details have been exaggerated for clarity, and some details may have been omitted. The shapes of the various regions and layers shown in the figures, as well as their relative sizes and positional relationships are only exemplary, and in practice, there may be deviations due to manufacturing tolerances or technical limitations, and those skilled in the art should Regions / la...

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Abstract

Disclosed are a vertical type semiconductor device to which strain engineering is applied, a method of manufacturing the same, and electronic equipment including the semiconductor device. According to an embodiment, a vertical semiconductor device includes: a vertical active region disposed on a substrate, including a first source / drain layer, a channel layer, and a second source / drain layer stacked in sequence, wherein, At least a part of the first source / drain layer close to the peripheral surface is a stress source, at least a part of the second source / drain layer close to the peripheral surface is a stress source; and a gate stack formed around at least part of the peripheral surface of the channel layer.

Description

technical field [0001] The present disclosure relates to the field of semiconductors, and more particularly, to a vertical type semiconductor device to which strain engineering is applied, a method of manufacturing the same, and an electronic device including such a semiconductor device. Background technique [0002] In a horizontal type device such as a metal oxide semiconductor field effect transistor (MOSFET), the source, gate and drain are arranged in a direction substantially parallel to the surface of the substrate. Due to this arrangement, the horizontal type device cannot easily be further reduced. In contrast, in a vertical device, the source, gate, and drain are arranged in a direction generally perpendicular to the substrate surface. Therefore, vertical type devices are easier to shrink than horizontal type devices. [0003] However, in vertical devices, there is a lack of means to effectively apply strain engineering. SUMMARY OF THE INVENTION [0004] In vie...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L21/336
CPCH01L29/66666H01L29/7827H01L29/7848H01L29/66545H01L29/165
Inventor 朱慧珑黄伟兴张永奎尹晓艮李晨贾昆鹏
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI