A preparation method of wide-band uncooled infrared detector based on fbar

An uncooled infrared and detector technology, applied in the field of infrared detection, can solve the problems of reducing the reliability of infrared detectors, affecting the performance of infrared detectors, limited material selection range, etc., achieving reliable infrared detection performance, and overcoming the absorption bandwidth of infrared radiation. The effect of limited, easy absorption width

Active Publication Date: 2020-06-26
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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Problems solved by technology

At present, multi-layer structure absorption is usually used to increase the absorption bandwidth, and the absorption band of different layers is used to widen the absorption bandwidth of the absorption layer. Specifically, it includes: using different materials to prepare the absorption layer, but this method is limited by the stress of material preparation, and the range of material selection is limited. And increasing the thickness of the absorbing layer will affect the performance of the infrared detector; using a multi-layer micro-bridge structure, however, is limited by the difficulty of the process and the number of stacked layers is limited, so the absorption width is limited. In addition, this method greatly increases the process complexity and reduces the infrared detector. reliability

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  • A preparation method of wide-band uncooled infrared detector based on fbar
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  • A preparation method of wide-band uncooled infrared detector based on fbar

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[0048] In order to be able to understand the above objectives, features and advantages of the present invention more clearly, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0049] In the following description, many specific details are set forth in order to fully understand the present invention. However, the present invention can also be implemented in other ways different from those described here. Therefore, the protection scope of the present invention is not limited to the specific details disclosed below. Limitations of the embodiment.

[0050] The method for preparing a wide-band uncooled infrared detector based on FBAR of the present invention has the following specific steps:

[0051] S1, get silicon substrate 2-6

[0052] Such as figure 1 As shown, the silicon substrate 2-6 is obtained; the silicon substrate 2-6 is a high-resistance double-polished silicon wafer commonly used in the se...

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Abstract

A preparation method of an FBAR-based wide-band uncooled infrared detector relates to the field of infrared detection technology, which solves the problems of low absorption rate and limited wide-band absorption bandwidth of the infrared detector obtained by the preparation method, including the preparation of FBAR; Prepare a medium layer and a metal array layer; prepare a readout integrated circuit substrate; connect the readout integrated circuit substrate and FBAR; the metal array layer includes a plurality of metal units, and each metal unit is composed of at least three metal blocks of different sizes. The preparation method of the present invention has the advantages of integrated manufacturing, batch production, and low cost; by integrating the dielectric layer and the metal array layer on the surface of the FBAR, the enhanced absorption of the infrared spectrum by the uncooled infrared detector is realized, and broadband absorption is realized at the same time, and the production is simple And the infrared detector has excellent detection performance; the prepared detector not only has the advantages of traditional uncooled infrared detection, but also has fast response and high detection sensitivity.

Description

Technical field [0001] The invention relates to the technical field of infrared detection, in particular to a preparation method of a wide-band uncooled infrared detector based on FBAR. Background technique [0002] According to different working temperatures, infrared detectors are generally divided into two categories: refrigerated and uncooled. Cooled infrared detectors are usually made of semiconductor materials. Using the photoelectric effect of some materials, the photosensitive material absorbs photons, causing changes in electrical parameters. In order to suppress hot carriers and noise, the working temperature of refrigerated infrared detectors is usually below 77K. It needs to use a refrigerator or liquid nitrogen for refrigeration, which will result in a relatively large volume and weight, and a relatively expensive price. Uncooled infrared detectors are also called room temperature detectors, which can work at room temperature without cooling, so they have the adva...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01J5/00H03H9/17
CPCG01J5/00H03H9/171
Inventor 陶金梁中翥孟德佳吕金光秦余欣梁静秋罗奕张宇昊
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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