Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Ultra-wideband low-noise amplifier

A low-noise amplifier and ultra-wideband technology, used in amplifiers, improving amplifiers to expand bandwidth, improving amplifiers to improve efficiency, etc., can solve the problems of large circuit area, narrow bandwidth, inability to take into account matching characteristics, etc., and achieve a small overall circuit area. , the effect of simple circuit structure

Pending Publication Date: 2019-03-15
NANJING MILEWEI CORP
View PDF0 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Purpose of the invention: The purpose of the present invention is to provide an ultra-wideband low-noise amplifier, which can solve the problems of narrow bandwidth, inability to balance matching characteristics and noise figure, and large circuit area in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ultra-wideband low-noise amplifier
  • Ultra-wideband low-noise amplifier

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] This specific embodiment discloses an ultra-wideband low-noise amplifier, such as figure 1 As shown, it includes a first bipolar transistor Q1, a second bipolar transistor Q2, a third bipolar transistor Q3 and a fourth bipolar transistor Q4, the base of the first bipolar transistor Q1 is connected to the first inductor One end of L1, the other end of the first inductor L1 are respectively connected to one end of the first capacitor C1 and one end of the second resistor R2, the other end of the first capacitor C1 is grounded, and the other end of the second resistor R2 is connected to one end of the second capacitor C2 , the other end of the second capacitor C2 is respectively connected to one end of the third inductor L3, one end of the fourth inductor L4 and the base of the third bipolar transistor Q3, and the other end of the third inductor L3 is connected to the first bipolar transistor Q1 The collector of the first bipolar transistor Q1, the emitter of the first bip...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an ultra-wideband low-noise amplifier, which comprises a first bipolar transistor Q1, a second bipolar transistor Q2, a third bipolar transistor Q3 and a fourth bipolar transistor Q4. A negative feedback loop is formed by a first inductor L2 and a second resistor R2; ultra-wideband power matching and noise matching are performed on the first bipolar transistor Q1 so that 50Ohm input impedance matching and output impedance matching in an ultra-wideband frequency range of 0.5 GHz-20 GHz can be achieved; and also, it can be achieved that the noise coefficient in the ultra-wideband frequency range of 0.5 GHz-20GHz is lower than 4dB. In addition, the circuit in the invention is simple in structure and small in overall area.

Description

technical field [0001] The invention relates to a low-noise amplifier, in particular to an ultra-wideband low-noise amplifier. Background technique [0002] In all kinds of radio transmitters, the first-stage amplifier of the RF front-end is generally a low-noise amplifier. As the core module in the front-end circuit of a wide-band receiver, the low-noise amplifier must simultaneously meet the requirements of good matching at the input end in the upper GHz broadband. To reduce the return loss, high and flat gain to suppress the noise contribution of the subsequent circuit to the overall receiver, low noise figure to improve the sensitivity of the receiver. Traditional radio frequency low noise amplifiers are generally common-emitter amplifiers, which use emitter degeneration inductance. The operating bandwidth of this type of amplifier is relatively narrow. Some broadband low-noise amplifiers have been proposed in the prior art, such as distributed amplifiers, source-degene...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/26H03F1/42H03F1/02H03F1/56
CPCH03F1/0205H03F1/26H03F1/42H03F1/565
Inventor 宋海瑞吴建军盖川
Owner NANJING MILEWEI CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com