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A far-infrared domain polarization-insensitive all-dielectric metasurface structure and fabrication method

A polarization-insensitive, all-dielectric technology, applied in optical components, instruments, optics, etc., can solve the problems of lack of repeatability and flexibility, polarization sensitivity of excitation electromagnetic waves, etc., and achieve ultra-high refractive index sensitivity, high abundance, and process mature effect

Active Publication Date: 2020-12-18
PINGDINGSHAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Due to the asymmetry of the structure and the directionality of the opening, these asymmetric structures or split resonators are often polarization-sensitive to excitation electromagnetic waves, and lack repeatability and flexibility in practical applications.

Method used

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  • A far-infrared domain polarization-insensitive all-dielectric metasurface structure and fabrication method
  • A far-infrared domain polarization-insensitive all-dielectric metasurface structure and fabrication method
  • A far-infrared domain polarization-insensitive all-dielectric metasurface structure and fabrication method

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Experimental program
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Embodiment 1

[0039] Such as Figure 1 to Figure 4 As shown, the present embodiment provides a polarization-insensitive all-dielectric metasurface structure in the far-infrared region, including a substrate 1 and a concentric double-closed dielectric resonator ring unit 2 in a two-dimensional periodic distribution on the surface of the substrate 1; the substrate 1 and the concentric double-closed dielectric resonant ring unit 2 are all dielectric materials.

[0040] Further, the refractive index of the all-dielectric material of the substrate 1 is greater than 1.4 and less than or equal to 5. Preferably, the all-dielectric material of the substrate 1 is SiO 2 .

[0041] Further, the refractive index of the all-dielectric material of the concentric double-closed dielectric resonant ring unit 2 is greater than 2 and less than or equal to 6. Preferably, the all-dielectric material of the concentric double-closed dielectric resonant ring unit 2 is Si.

[0042] SiO 2 And Si material, high a...

Embodiment 2

[0055] The base material used in the concentric double-closed dielectric resonant ring unit 2 is Si, and the refractive index n=3.4; the base material used in the base 1 is SiO 2 , Refractive index n=1.48; unit period P x =P y =200μm; substrate thickness h 1 =40μm; double ring thickness h 2 =20μm; from outside to inside, the radius r of each circle 1 = 60 μm, r 2 = 45 μm, r 3 = 30 μm, r 4 =15μm, such as Figure 1 to Figure 4 shown.

[0056] The far-infrared electromagnetic wave is perpendicular to the metasurface, and the transmission spectrum in the far-infrared band (1400-1450 GHz) is calculated by the finite element method, and the modulation depth of the Fano resonance line is greater than 0.8, and the central wavelength is f 0 =1420GHz, resonance quality factor Q=f 0 / Δf=473; change the polarization direction of the incident electromagnetic wave to 15°, 30°, and 45°, except that the Fano resonance valley moves up slightly with the increase of the angle, and the l...

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Abstract

The invention belongs to the technical field of micro-nano photoelectric device electromagnetic wave regulation and sensing detection, and particularly relates to a far-infrared domain polarization-insensitive all-dielectric super-surface structure and a manufacturing method thereof. The super-surface comprises a substrate and a concentric double-closed dielectric resonance loop unit located on the surface of the substrate and distributed in the two-dimensional periodicity; used base materials of the substrate and concentric double-closed dielectric resonance loop unit are all-dielectric materials. The super-surface is insensitive to the polarization of excitation electromagnetic waves due to the high symmetry of the structure; the Fano resonance line font with high modulation depth and high Q values in a far-infrared domain can be obtained through the modulation of geometric parameters; because the preferred base materials for constructing the super-surface are all-dielectric Si and SiO2 materials, the process is mature, simple and easy to operate, and the manufacturing cost is low.

Description

technical field [0001] The invention belongs to the technical field of electromagnetic wave regulation and sensing detection of micro-nano optoelectronic devices, and in particular relates to a polarization-insensitive all-dielectric metasurface structure and a manufacturing method for a far-infrared domain refractive index sensor. Background technique [0002] In the electromagnetic spectrum, the far infrared region contains important information and has important scientific value. For example, radiation between celestial bodies, imaging and detection in the fields of biology and medicine, resource detection, optical communication and other fields are inseparable from the acquisition and identification of far-infrared signals. The development of high-performance far-infrared sensors is of great significance to astrophysics, new material research, and medical and biological applications. [0003] In recent years, the use of artificially designed metamaterials or metasurface...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B1/00
CPCG02B1/002
Inventor 田明丽何金娜姬鹏飞万明理李勇宋月丽周丰群袁书卿
Owner PINGDINGSHAN UNIVERSITY
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