Wafer grinding and polishing method and corresponding wafer

Abstract

The invention discloses a wafer grinding and polishing method and a corresponding wafer. The wafer grinding and polishing method comprises the steps: preparing a grinding fluid matching a wafer according to the hardness of the wafer; adopting the grinding liquid to grind the wafer; polishing the ground wafer in a chemical mode so as to release stress generated by grinding operation; and cleaning the polished wafer to obtain the ground and polished wafer. The proper grinding fluid is prepared according to the hardness of the wafer, so that the grinding removal rate is guaranteed, and the waferthinning effect is achieved; meanwhile, the wafer is polished in a chemical mode, stress generated in the grinding process is released, the flatness of the wafer is guaranteed, and the wafer is effectively prevented from cracking.

Description

technical field

[0001] The invention belongs to the technical field of chip manufacturing, and more specifically relates to a wafer grinding and polishing method and a corresponding wafer. Background technique

[0002] In the wafer preparation process, the traditional grinding process is to directly stick the wafer to be ground on the fixture with paraffin, for example, directly stick the wafer to the quartz glass with paraffin for back grinding. During the grinding process, the grinding liquid used is a mixture of aluminum oxide with a particle diameter of 5 μm, water-based grinding liquid, and deionized water; after the grinding is completed, the wafer is removed from the fixture, and then heated by chemicals The method removes the paraffin on the wafer and the impurities generated by grinding.

[0003] The foregoing method has the following problems: for certain hard wafers, during the grinding process, when the grinding liquid configured by aluminum oxide with a diamete...

Examples

Embodiment 1

[0035] At present, for some wafers with relatively hard materials, during the grinding process, when the grinding liquid configured by aluminum oxide with a diameter of 5 μm is used to grind the wafers, it is very difficult to grind, and it is almost impossible to grind. Easily splinters. At the same time, the stress generated during the grinding process is too large, and the wafer is severely warped or even cracked when it is unloaded from the fixture. In the process of removing impurities by heating chemicals, it is also easy to cause the wafer to break.

[0036] In order to solve the foregoing problems, an embodiment of the present invention provides a method for grinding and polishing a wafer. The grinding and polishing method configures a suitable grinding liquid according to the hardness of the wafer to ensure the removal rate of the grinding and achieve the goal of thinning the wafer. Effect. Since the hardness of the grinding liquid and the wafer match each other, not...

Embodiment 2

[0055] Aiming at the existing application scenarios, the inventor has verified through batch implementation, based on the grinding and polishing method of the wafer in embodiment 1, provided a set of better parameter combinations, the type of solution, the concentration of the solution, the time of polishing And the associated constraints such as corrosion time are further limited to be suitable for industrial production and improve the yield of products. details as follows:

[0056] In this embodiment, the composition of the wafer includes at least one of gallium arsenide or iron-doped indium phosphide, the final size of the wafer after grinding is about 150 μm, and the grinding liquid is composed of aluminum oxide, grinding It is made by mixing oil and water in a certain proportion.

[0057] Since the diameter of aluminum oxide in the grinding liquid has a great influence on the grinding rate of hard materials, the larger the particle size, the faster the grinding removal r...

Embodiment 3

[0065] Corresponding to the above-mentioned embodiment 1 and embodiment 2, the embodiment of the present invention further provides a wafer, which is manufactured according to the grinding and polishing method of the above-mentioned embodiment 1 or embodiment 2.

[0066] For the specific process of the grinding and polishing method of the wafer, please refer to Figure 1 ~ Figure 4 and related text descriptions, which will not be repeated here.

[0067] In the embodiment of the present invention, since the hardness of the grinding fluid and the wafer match each other, not only the grinding quality can be ensured, but also the grinding efficiency can be improved. On the other hand, using chemical polishing liquid to polish the wafer can effectively release the stress generated during the grinding process, eliminate the serious warping of the wafer, and ensure the flatness of the wafer, thereby ensuring the subsequent solution. The physical test can be carried out successfully....

technical field

[0001] The invention belongs to the technical field of chip manufacturing, and more specifically relates to a wafer grinding and polishing method and a corresponding wafer. Background technique

[0002] In the wafer preparation process, the traditional grinding process is to directly stick the wafer to be ground on the fixture with paraffin, for example, directly stick the wafer to the quartz glass with paraffin for back grinding. During the grinding process, the grinding liquid used is a mixture of aluminum oxide with a particle diameter of 5 μm, water-based grinding liquid, and deionized water; after the grinding is completed, the wafer is removed from the fixture, and then heated by chemicals The method removes the paraffin on the wafer and the impurities generated by grinding.

[0003] The foregoing method has the following problems: for certain hard wafers, during the grinding process, when the grinding liquid configured by aluminum oxide with a diamete...

Examples

Embodiment 1

[0035] At present, for some wafers with relatively hard materials, during the grinding process, when the grinding liquid configured by aluminum oxide with a diameter of 5 μm is used to grind the wafers, it is very difficult to grind, and it is almost impossible to grind. Easily splinters. At the same time, the stress generated during the grinding process is too large, and the wafer is severely warped or even cracked when it is unloaded from the fixture. In the process of removing impurities by heating chemicals, it is also easy to cause the wafer to break.

[0036] In order to solve the foregoing problems, an embodiment of the present invention provides a method for grinding and polishing a wafer. The grinding and polishing method configures a suitable grinding liquid according to the hardness of the wafer to ensure the removal rate of the grinding and achieve the goal of thinning the wafer. Effect. Since the hardness of the grinding liquid and the wafer match each other, not...

Embodiment 2

[0055] Aiming at the existing application scenarios, the inventor has verified through batch implementation, based on the grinding and polishing method of the wafer in embodiment 1, provided a set of better parameter combinations, the type of solution, the concentration of the solution, the time of polishing And the associated constraints such as corrosion time are further limited to be suitable for industrial production and improve the yield of products. details as follows:

[0056] In this embodiment, the composition of the wafer includes at least one of gallium arsenide or iron-doped indium phosphide, the final size of the wafer after grinding is about 150 μm, and the grinding liquid is composed of aluminum oxide, grinding It is made by mixing oil and water in a certain proportion.

[0057] Since the diameter of aluminum oxide in the grinding liquid has a great influence on the grinding rate of hard materials, the larger the particle size, the faster the grinding removal r...

Embodiment 3

[0065] Corresponding to the above-mentioned embodiment 1 and embodiment 2, the embodiment of the present invention further provides a wafer, which is manufactured according to the grinding and polishing method of the above-mentioned embodiment 1 or embodiment 2.

[0066] For the specific process of the grinding and polishing method of the wafer, please refer to Figure 1 ~ Figure 4 and related text descriptions, which will not be repeated here.

[0067] In the embodiment of the present invention, since the hardness of the grinding fluid and the wafer match each other, not only the grinding quality can be ensured, but also the grinding efficiency can be improved. On the other hand, using chemical polishing liquid to polish the wafer can effectively release the stress generated during the grinding process, eliminate the serious warping of the wafer, and ensure the flatness of the wafer, thereby ensuring the subsequent solution. The physical test can be carried out successfully....

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