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Preparation method and application of ultra-clean interface heterojunction

A heterojunction and interface technology, applied in the field of ultra-clean interface heterojunction preparation, can solve the problems of difficult electron collection, flexibility and transparency, etc., and achieve high-efficiency charge collection, low cost and simple method Effect

Active Publication Date: 2019-03-29
PEKING UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, the traditional electrode materials are gold, copper and other electrodes, which are difficult to be flexible and transparent, and the traditional acceptor materials such as titanium dioxide are difficult to effectively collect electrons in the absorber.

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  • Preparation method and application of ultra-clean interface heterojunction
  • Preparation method and application of ultra-clean interface heterojunction
  • Preparation method and application of ultra-clean interface heterojunction

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Embodiment Construction

[0043] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative efforts fall within the protection scope of the present invention.

[0044] The invention provides a method for preparing an ultra-clean interface, using a clean transfer method without the aid of a high polymer to non-destructively transfer a subcentimeter-sized large single-crystal graphene film prepared by chemical vapor deposition to a porous substrate such as a transmission electron microscope microgrid , to prepare a com...

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Abstract

The invention provides a preparation method and an application of an ultra-clean interface heterojunction. The preparation method comprises steps that firstly, a large-area single crystal graphene film is grown through chemical vapor deposition, secondly, the suspension graphene on a transmission electron microscope grid is prepared through a non-polymer-assisted cleaning transfer method, and lastly, a perovskite single crystal with thickness of 5-100 nm is directly synthesized on the surface of the cleaned graphene through a one-step solution method, and preparation of the ultra-clean interface heterojunction is completed. The method is advantaged in that polymer pollution in the transfer process can be completely avoided, heterojunction electron coupling is quite good, the interface is quite clean, moreover, through further characterization, the graphene is utilized as a two-dimensional electrode and an acceptor material for ultra-fast and high-efficiency carrier collection under theultra-clean interface, the heterojunction obtained by the method has photocurrent conversion efficiency up to 98%, and the collection time scale of photogenerated carriers is the hundred femtosecondscale.

Description

technical field [0001] The invention relates to a preparation method of an ultra-clean interface, in particular to a preparation method and application of an ultra-clean interface heterojunction. Background technique [0002] With the continuous exploitation and utilization of fossil energy by human beings, and the accompanying increasingly serious environmental pollution problems, the human demand for solar energy is becoming increasingly urgent, and the effective use of solar energy has become the focus of attention. In recent years, new organic-inorganic perovskite solar cells have attracted widespread attention due to their excellent photoelectric properties, and have become a research hotspot in the field of solar cells. in CH 3 NH 3 PB 3 The photoelectric conversion efficiency of organometallic halides represented by perovskite crystal form has reached as high as 22%, surpassing that of polycrystalline silicon solar cells, and has a good application prospect. At th...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/48H01L51/42H01L51/44
CPCH10K71/60H10K30/10H10K30/81Y02E10/549
Inventor 洪浩张金灿刘开辉彭海琳
Owner PEKING UNIV