A laser epitaxial structure and manufacturing method
A technology of epitaxial structure and manufacturing method, which is applied in the direction of lasers, laser components, semiconductor lasers, etc., and can solve problems affecting the characteristics of laser epitaxial structures, overoxygen, uneven oxidation thickness, etc.
Active Publication Date: 2021-01-22
YANGZHOU CHANGELIGHT
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Problems solved by technology
[0003] However, at present, after the growth of the laser epitaxy structure is completed, the phenomenon of overoxygen often occurs during the oxidation process, and the oxidation thickness is uneven, so that the stress of the laser epitaxy structure is relatively large, thereby affecting the characteristics of the laser epitaxy structure
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[0037] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0038] In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.
[0039] refer to figure 1 , figure 1 A schematic diagram of a laser epitaxial structure provided by an embodiment of the present invention, the laser epitaxial structure includes:
[0040] Substrate 101;
[0041...
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Abstract
The invention provides a laser epitaxial structure and a manufacturing method. In the laser epitaxial structure, an Al<0.98>Ga<0.02>As layer and a DBR reflecting mirror layer connected therewith havehigher Al components. In the oxidation process, a certain degree of oxidation exists, so that the epitaxial structure cannot be oxidized through the first GaAs layer and the second GaAs layer, an interface is clearer, oxidation is more uniform, and the influence of non-uniform oxidation on stress is reduced, thereby improving the characteristics of the epitaxial structure. Moreover, by adding thefirst AlyGa1-yAs layer and a second AlyGa1-yAs (0.6<y<0.98), and the structure does not comprise an end point value, so that three chamfers in a trifurcate oxidation process and an oxidation process are formed, thereby facilitating the reduction of the oxidation rate and further reducing the oxidation of other DBR reflecting mirror layers.
Description
technical field [0001] The invention relates to the technical field of laser epitaxy, and more specifically, to a laser epitaxy structure and a manufacturing method. Background technique [0002] VCSEL (Vertical Cavity Surface Emitting Laser, Vertical Cavity Surface Emitting Laser), compared with other light sources such as LED (Light Emitting Diode, Light Emitting Diode) and LD (Laser Diode, Laser Diode), has small size, circular output spot and low price And other advantages, are widely used in optical communication, optical interconnection and optical storage and other fields. [0003] However, at present, after the laser epitaxy structure is grown, overoxygen often occurs during the oxidation process, and the oxidation thickness is uneven, so that the stress of the laser epitaxy structure is relatively large, thereby affecting the characteristics of the laser epitaxy structure. Contents of the invention [0004] In view of this, in order to solve the above-mentioned p...
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IPC IPC(8): H01S5/183H01S5/343
CPCH01S5/18313H01S5/34353G06F12/0607G06F2212/1016
Inventor 田宇韩效亚吴真龙杜石磊
Owner YANGZHOU CHANGELIGHT