Silicon carbide chemical mechanical polishing liquid with improved pH stability and its application

A chemical mechanical and polishing liquid technology, which is applied to polishing compositions containing abrasives, electrical components, circuits, etc., can solve the problems of uncontrolled pH value, low abrasive hardness, and low polishing efficiency of silicon carbide, so as to reduce hardness Agglomeration, dispersion stability Uniform dispersion, enhanced dispersion uniformity and stability

Active Publication Date: 2020-11-20
SICC CO LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The CMP polishing liquid of ASAHI GLASS company uses potassium permanganate as the oxidizing agent and acidic silicon oxide or cerium oxide as the abrasive. During the use of the polishing liquid, the pH value cannot be controlled, and the abrasive hardness is low. Therefore, the CMP polishing liquid of ASAHI GLASS company The polishing efficiency of silicon carbide is low

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Silicon carbide chemical mechanical polishing liquid with improved pH stability and its application
  • Silicon carbide chemical mechanical polishing liquid with improved pH stability and its application
  • Silicon carbide chemical mechanical polishing liquid with improved pH stability and its application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0060] A silicon carbide chemical mechanical polishing liquid with stable pH value, the polishing liquid comprises: a concentration of 15% acidic aluminum oxide dispersion 100ml, 0.5% (based on the weight of aluminum oxide) surface modifier organic acid, 0.05% ( final concentration) of the pH stabilizer aluminum nitrate and 0.1% (final concentration) of the oxidizing agent potassium permanganate.

Embodiment 2

[0062] A silicon carbide chemical mechanical polishing liquid with stable pH value, the polishing liquid comprises: a concentration of 25% acidic aluminum oxide dispersion 100ml, 2.0% (based on the weight of aluminum oxide) surface modifier organic acid, 1.0% ( final concentration) of pH stabilizer aluminum nitrate and 4.0% (final concentration) of oxidant potassium permanganate.

Embodiment 3

[0064] A silicon carbide chemical mechanical polishing liquid with a stable pH value, the polishing liquid comprises: a concentration of 20% acidic aluminum oxide dispersion 100ml, 1.0% (based on the weight of aluminum oxide) surface modifier organic acid, 0.08% ( final concentration) of the pH stabilizer aluminum nitrate and 2.5% (final concentration) of the oxidizing agent potassium permanganate.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
particle diameteraaaaaaaaaa
Mohs hardnessaaaaaaaaaa
Login to view more

Abstract

The invention provides a silicon carbide chemical mechanical polishing liquid with improved pH value stability, wherein the polishing liquid comprises an oxidizing agent, a high-hardness abrasive material and a pH value stabilizer, and the pH value stabilizer is aluminum nitrate. According to the present invention, the polishing liquid can well maintain the pH value stability during the chemical mechanical polishing, and has advantages of good dispersion stability and uniform dispersion; by adding the pH value stabilizer aluminum nitrate to the polishing liquid, the pH value stability of the polishing liquid during the chemical mechanical polishing is strong, and the polishing liquid is not easily subjected to hard agglomeration; and the polishing liquid is environmentally friendly, and can be used in a circulating material supply manner.

Description

technical field [0001] The invention relates to the technical field of chemical mechanical polishing, in particular to a silicon carbide chemical mechanical polishing liquid with stable pH value and application thereof. Background technique [0002] Due to the high hardness (9.5) and strong chemical inertness of silicon carbide, the polishing speed of alkaline hydrogen peroxide-silicon oxide CMP polishing fluid is very low (<50nm / hr), for two reasons: one is the hardness of silicon oxide Small (6-7); Second, the chemical action of the oxidizing agent is weak under alkaline conditions. Therefore, the use of α-Al whose hardness is second only to silicon carbide 2 o 3 The acidic (pH<7, especially pH<4) silicon carbide chemical mechanical polishing fluid of the abrasive has become the mainstream. [0003] In order to improve chemical oxidation, potassium permanganate has become the most widely used oxidant, but potassium permanganate will consume H during the oxidati...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C09G1/02H01L21/304
CPCC09G1/02H01L21/304
Inventor 窦文涛宗艳民梁庆瑞王含冠其他发明人请求不公开姓名
Owner SICC CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products