The application discloses a colloidal
cerium oxide polishing liquid and a preparation method thereof, and steps are as follows: S1. Dissolving a soluble
cerium salt in deionized water, and respectively dissolving a surfactant, a suspension aid and an
imidazole modifier in the deionized water and stirring and clarifying, mixing all the solutions, and performing ultrasonic stirring and high-pressure
homogenizer circulation treatment to prepare a modified reaction precursor; S2. Continuously stirring the precursor, adding a precipitant at a uniform speed, and stirring after aging by heating to form a colloidal
cerium oxide nanosphere solution with a nanosphere appearance; S3. Centrifuging the solution, washing and freeze-
drying the
solid to obtain a
cerium oxide powder, mixing and stirring the
powder and deionized water to disperse, and preparing the colloidal
cerium oxide polishing liquid. The
polishing liquid has uniform particle size, stable dispersion, a high SiO2 / Si3N4 selection ratio, can reduce
wafer scratches, guarantee stable polishing performance, and is suitable for the chemical mechanical polishing demand of a
semiconductor wafer shallow trench isolation process.