2results about How to "Reduce hard agglomerates" patented technology

The invention discloses a high-rate lithium nickel manganese oxide material modified by high-entropy doping site design, a preparation method thereof and a lithium ion battery, and belongs to the technical field of lithium nickel manganese oxide materials, the preparation method comprises the following steps: adding a lithium source, a nickel source and a manganese source into water according to LiNi < 0.5-x > N < x > Mn < 1.5-y > M < y > O < 4 >, and stirring to obtain a mixture; and adding soluble salt or metal oxide of covalent or heterovalent doped ions M with radius close to that of Mn < 4 + > ions and soluble salt or metal oxide of covalent or heterovalent doped ions N with radius close to that of Ni < 2 + > ions into the first solution, adding a complexing agent and a viscosity regulator, regulating the pH value, aging, drying and sintering. Ions with similar atomic radiuses are selected for different atomic sites for design replacement, and lattice distortion is avoided. High-valence metal ions such as V < 5 + > / Nb < 5 + > / Sb < 5 + > / Mo < 6 + > are added, so that the cation disorder of the material is improved, and the ionic conductance and the electronic conductance of the crystal material are further improved.

The application discloses a colloidal cerium oxide polishing liquid and a preparation method thereof, and steps are as follows: S1. Dissolving a soluble cerium salt in deionized water, and respectively dissolving a surfactant, a suspension aid and an imidazole modifier in the deionized water and stirring and clarifying, mixing all the solutions, and performing ultrasonic stirring and high-pressure homogenizer circulation treatment to prepare a modified reaction precursor; S2. Continuously stirring the precursor, adding a precipitant at a uniform speed, and stirring after aging by heating to form a colloidal cerium oxide nanosphere solution with a nanosphere appearance; S3. Centrifuging the solution, washing and freeze-drying the solid to obtain a cerium oxide powder, mixing and stirring the powder and deionized water to disperse, and preparing the colloidal cerium oxide polishing liquid. The polishing liquid has uniform particle size, stable dispersion, a high SiO2 / Si3N4 selection ratio, can reduce wafer scratches, guarantee stable polishing performance, and is suitable for the chemical mechanical polishing demand of a semiconductor wafer shallow trench isolation process.