Diamond polishing solution for rough polishing of silicon carbide wafers and preparation method

A technology of silicon carbide crystal and diamond, which is applied in the field of diamond polishing fluid and preparation for rough polishing of silicon carbide wafers, can solve problems such as difficulty in dispersion and limit the development of oily polishing fluid, and achieve easy cleaning, rich surface active groups, and improved utilization rate effect

Inactive Publication Date: 2021-03-12
HENAN UNION ABRASIVES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although oil-based polishing fluids have the advantages of good lubricity, high polishing efficiency, and good surface quality of wafers after polishing, the development of oil-based polishing fluids is limited due to the difficulty of dispersing fine-grained diamond abrasives in oil-based systems.

Method used

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  • Diamond polishing solution for rough polishing of silicon carbide wafers and preparation method
  • Diamond polishing solution for rough polishing of silicon carbide wafers and preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] ① Weigh 300nm polycrystalline diamond powder and disperse it in water. The solid content of diamond powder in water is 5%. Ultrasonic dispersion is carried out at room temperature for 30 minutes under stirring. The speed of the machine is 1500rpm, the centrifugation time is 8min, and the coarse throwing is done 3 times to fully remove the oversized particles and hard aggregates in the dispersion;

[0029] ②Centrifugal dehydration of the dispersed liquid after throwing coarse to obtain a paste slurry with low water content, measure the water content of the paste slurry, and adjust the water content of the final paste slurry to 50%;

[0030] 3. Freeze-drying with a low-temperature freeze dryer 2. is the pasty slurry with a water content of 50% to obtain dry, loose, diamond abrasives without lumps;

[0031] ④Weigh 92 parts of C12-C15 mineral oil, 4 parts of dispersant KH550, 5 parts of diamond abrasive in ③, and ultrasonicate for 30-60min at room temperature under stirrin...

Embodiment 2

[0037] ① Weigh 700nm polycrystalline diamond powder and disperse it in water. The solid content of diamond powder in water is 6%. Ultrasonic dispersion is carried out at room temperature for 30 minutes under stirring. The speed of the machine is 750rpm, the centrifugation time is 5min, and the coarse throwing is done 3 times to fully remove the oversized particles and hard aggregates in the dispersion;

[0038] ②Centrifugal dehydration of the dispersed liquid after throwing coarse to obtain a paste slurry with low water content, measure the water content of the paste slurry, and adjust the water content of the final paste slurry to 60%;

[0039] 3. Freeze-drying with a low-temperature freeze dryer 2. is a paste slurry with a water content of 60% to obtain dry, loose, diamond abrasives without lumps;

[0040] ④ Weigh 90 parts of C12-C15 mineral oil, 3 parts of dispersant OFS-6341, 6 parts of diamond abrasive in ③, ultrasonically 30-60min at room temperature under stirring, ult...

Embodiment 3

[0046] ① Weigh 1 μm polycrystalline diamond powder and disperse it in water. The solid content of diamond powder in water is 7.5%. Ultrasonic dispersion is carried out at room temperature for 30 minutes under stirring. The speed of the machine is 200rpm, and the throwing time is 3 minutes for 3 times to fully remove the oversized particles and hard aggregates in the dispersion;

[0047] ②Centrifugal dehydration of the dispersed liquid after throwing coarse to obtain a paste slurry with low water content, measure the water content of the paste slurry, and adjust the water content of the final paste slurry to 75%;

[0048] 3. Freeze-drying with a low-temperature freeze dryer 2. is the pasty slurry with a water content of 75% to obtain dry, loose, diamond abrasives without lumps;

[0049] ④Weigh 89 parts of C12-C15 mineral oil, 2 parts of dispersant KH550, 8 parts of diamond abrasive in ③, and ultrasonicate for 30-60min at room temperature under stirring, ultrasonic power: 800KW...

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Abstract

The invention provides a diamond polishing solution for rough polishing of a silicon carbide wafer and a preparation method. The diamond polishing solution comprises the following components in percentage by weight: 0.1-1% of a diamond abrasive, 3-10% of an oiliness agent, 0.1-0.4% of a dispersing agent, 0.1-0.5% of modified urea solution, 0.1-0.5% of an activating agent and the balance of basic solvent. By adopting the abrasive two-step treatment method, the utilization rate of the polycrystalline diamond powder can be effectively increased, and meanwhile, the problem of scratching caused byoversize particles and hard aggregates in the polishing solution is effectively reduced; the modified urea solution is adopted as an organic suspending agent, the polishing solution has no obvious layering phenomenon after being placed for a long time, and compared with inorganic suspending agents such as hydrophobic modified fumed silica and organic bentonite, polishing scraps are not prone to adhering to a polishing disc and are easy to clean.

Description

technical field [0001] The invention relates to the technical field of ultra-precision grinding and polishing, in particular to a diamond polishing liquid for rough polishing of a silicon carbide wafer and a preparation method thereof. Background technique [0002] As one of the representative materials of the third-generation wide bandgap semiconductor, silicon carbide (SiC) has excellent physical and chemical properties. It has broad application prospects. SiC is one of the important semiconductor materials for high-tech metals such as microelectronics, power electronics and optoelectronics to continue to fight against war after entering the 21st century. With the maturation of SiC single crystal growth technology, how to obtain a polished SiC single crystal wafer with a perfect surface has become one of the key technologies for material application. [0003] At present, the polishing of silicon carbide wafers is generally divided into two processes, rough polishing and ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02
CPCC09G1/02
Inventor 付存付春淞刘丹丹王松娟王泳汪静
Owner HENAN UNION ABRASIVES
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