Preparation method of low-cost and high-densification ITO target material

A densification and low-cost technology, which is applied in the field of preparation of low-cost and high-densification ITO targets, can solve the problems that ITO targets cannot meet the requirements of high-performance thin film coating, and achieve low porosity, less hard agglomeration, and particle size evenly distributed effect

Inactive Publication Date: 2017-07-28
ANHUI TUOJITAI NOVEL CERAMIC TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The invention provides a low-cost and high-densification ITO target preparation method, which solves the problem that the ITO target prepared by the existing preparation method cannot meet the requirements of high-performance thin film coating

Method used

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  • Preparation method of low-cost and high-densification ITO target material
  • Preparation method of low-cost and high-densification ITO target material
  • Preparation method of low-cost and high-densification ITO target material

Examples

Experimental program
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Embodiment 1

[0030] This embodiment provides a method for preparing a low-cost and high-density ITO target, including the following steps:

[0031] (1) Weigh metal In and add to HNO 3 Completely dissolved in solution, according to In 2 o 3 / SnO 2 The mass ratio is 9:1, weigh SnCl 4 ·5H 2 O white crystals are added in the indium salt solution, stirred evenly to prepare the mixed salt solution;

[0032] (2) Take NH with a pH value of 7 4 AC buffer solution, adding a composite dispersant in the buffer solution; the addition of the composite dispersant is 4% of the total amount of ITO powder; the composite dispersant is sodium dodecylsulfonate with a mass ratio of 1:2:1, Pregelatinized starch and polyvinylpyrrolidone;

[0033] (3) Add ammonia water and mixed salt solution dropwise to the buffer solution at the same time, and during the dropping process, adjust the drip rate of ammonia water so that the pH value of the solution remains basically unchanged, and generate an indium tin hydr...

Embodiment 2

[0042] This embodiment provides a method for preparing a low-cost and high-density ITO target, including the following steps:

[0043] (1) Weigh metal In and add to HNO 3 Completely dissolved in solution, according to In 2 o 3 / SnO 2 The mass ratio is 9:1, weigh SnCl 4 ·5H 2 O white crystals are added in the indium salt solution, stirred evenly to prepare the mixed salt solution;

[0044](2) Take NH with a pH value of 6 4 AC buffer solution, adding a composite dispersant in the buffer solution; the addition of the composite dispersant is 2% of the total amount of ITO powder; the composite dispersant is sodium dodecylsulfonate with a mass ratio of 1:2:1, Pregelatinized starch and polyvinylpyrrolidone;

[0045] (3) Add ammonia water and mixed salt solution dropwise to the buffer solution at the same time, and during the dropping process, adjust the drip rate of ammonia water so that the pH value of the solution remains basically unchanged, and generate an indium tin hydro...

Embodiment 3

[0054] This embodiment provides a method for preparing a low-cost and high-density ITO target, including the following steps:

[0055] (1) Weigh metal In and add to HNO 3 Completely dissolved in solution, according to In 2 o 3 / SnO 2 The mass ratio is 9:1, weigh SnCl 4 ·5H 2 O white crystals are added in the indium salt solution, stirred evenly to prepare the mixed salt solution;

[0056] (2) Take NH with a pH value of 7 4 AC buffer solution, adding a composite dispersant in the buffer solution; the addition of the composite dispersant is 5% of the total amount of ITO powder; the composite dispersant is sodium dodecylsulfonate with a mass ratio of 1:2:1, Pregelatinized starch and polyvinylpyrrolidone;

[0057] (3) Add ammonia water and mixed salt solution dropwise to the buffer solution at the same time, and during the dropping process, adjust the drip rate of ammonia water so that the pH value of the solution remains basically unchanged, and generate an indium tin hydr...

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Abstract

The invention discloses a preparation method of a low-cost and high-densification ITO target material. The preparation method comprises the following steps: weighing metal In, adding into an HNO3 solution for complete dissolving, weighing SnCl4.5H2O white crystals, and adding into an indium salt solution, so as to prepare a mixed salt solution; preparing a NH4AC buffer solution, and adding a compound dispersing agent into the buffer solution; simultaneously dropwise adding ammonia water and the mixed salt solution into the buffer solution, so as to generate an indium-tin hydroxide precursor; after the reaction is complete, ageing, carrying out suction filtration, and respectively washing with water and an organic solvent; standing at room temperature for naturally airing; calcining at a high temperature for 4 hours, so as to obtain yellow ITO powder; and granulating the ITO powder, carrying out prepressing formation, so as to obtain a green body, and carrying out degreasing and sintering, so as to obtain the high-purity and high-density ITO target material. The ITO powder prepared in a preparation process of the preparation method has the characteristics of low sintering temperature and short time under a pressureless sintering condition and can be used for preparing the ITO target material which approaches to theoretical density and has relatively low porosity.

Description

technical field [0001] The invention relates to the technical field of ITO target preparation, in particular to a method for preparing a low-cost and high-density ITO target. Background technique [0002] The ITO film can be prepared by the magnetron sputtering method from the ITO target material. In industrial production, the magnetron sputtering method is mostly used to sputter the ITO target material on the glass into a very thin layer of transparent conductive film (thickness is about 100nm). ), etch the film to prepare electrode materials for flat panel displays. ITO powder is the raw material for preparing ITO sputtering coating targets. To obtain high-quality and high-density ITO sputtering targets, it is necessary to have a uniform composition of ultra-pure, ultra-fine and highly sinterable ITO powder. [0003] Generally speaking, the specific requirements for ITO powder are: the particle size is less than 100nm, and the specific surface area is greater than 15m 2 ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/01C04B35/626
Inventor 张天舒宋晓超孔令兵将卫国张天宇
Owner ANHUI TUOJITAI NOVEL CERAMIC TECH
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