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Gallium nitride epitaxial wafer vertical leakage current and Hall effect composite test method

A Hall effect, leakage current technology, applied in semiconductor/solid-state device testing/measurement, circuits, electrical components, etc., can solve the problems of prolonging the feedback time of test results, increasing the test cost, reducing the production efficiency, etc., so as to reduce the test cost. , the effect of improving production efficiency and reducing quantity

Active Publication Date: 2019-04-05
润新微电子(大连)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Two independent tests for two tape-outs are time-consuming and labor-intensive, which not only prolongs the feedback time of test results, reduces production efficiency, but also increases test costs

Method used

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  • Gallium nitride epitaxial wafer vertical leakage current and Hall effect composite test method

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Embodiment 1

[0031] The gallium nitride epitaxial wafer vertical leakage current and Hall effect combined testing method of the present invention is carried out according to the following steps:

[0032] a. If figure 1 , figure 2 As shown, the surface of the gallium nitride epitaxial barrier layer 4 composed of the substrate 1, the buffer layer 2, the channel layer 3 and the barrier layer 4 is divided into a vertical leakage current test area 5 and a Hall effect test area 6;

[0033] b. Perform photolithography, that is, through standard photolithography processes such as glue coating, development, and exposure, so that the vertical leakage current test area 5 is fully exposed, the Hall effect test area 6 and the isolation area 7 between the square test units are exposed, and the remaining areas are covered Photoresist for protection;

[0034] c. Etching, etch the exposed gallium nitride barrier layer in dry etching equipment such as RIE or ICP, and etch as deep as the channel layer, th...

Embodiment 2

[0043] The gallium nitride epitaxial wafer vertical leakage current and Hall effect combined testing method of the present invention is carried out according to the following steps:

[0044] a. If Figure 4 , Figure 5 As shown, the surface of the gallium nitride epitaxial barrier layer 4 composed of the substrate 1, the buffer layer 2, the channel layer 3 and the barrier layer 4 is divided into a vertical leakage current test area 5 and a Hall effect test area 6;

[0045] b. Perform photolithography, that is, through standard photolithography processes such as glue coating, development, and exposure, so that the vertical leakage current test area 5 is fully exposed, the Hall effect test area 6 electrode deposition area 8 is exposed, and the remaining areas are covered with photoresist. Protect;

[0046] c. Etching, etch the exposed gallium nitride barrier layer in dry etching equipment such as RIE or ICP, and etch as deep as the channel layer, that is, the etching depth exc...

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Abstract

The present invention discloses a gallium nitride epitaxial wafer vertical leakage current and Hall effect composite test method with a simple process flow, saved cost and high efficiency. The methodcomprises the steps of: dividing the surface of a barrier layer into a vertical leakage current test area and a Hall effect test area; performing the first photolithography to all expose the verticalleakage current test area and expose an isolation area between square test units of the Hall effect test area; performing first etching, wherein the etching depth reaches the channel layer; performingremoving of photoresist; employing a first shadow mask plate to perform electrode evaporation or sputtering, wherein first electrodeposition through holes are uniformly distributed on the first shadow mask plate; performing vertical leakage current test; performing ohmic contact annealing; and performing Hall effect test.

Description

technical field [0001] The invention relates to a test method for gallium nitride epitaxial wafers, in particular to a gallium nitride epitaxial wafer vertical leakage current and Hall effect composite testing method with simple process flow, cost saving and high efficiency. Background technique [0002] Gallium nitride (GaN) electronics, including high electron mobility transistors and diodes, are widely used in microwave power amplification and power electronic energy conversion. At present, the acquisition of gallium nitride materials is mainly based on heterogeneous epitaxy, and the substrates include silicon carbide, sapphire and silicon, which have successively lower prices per unit area. In addition to the extremely low price of the substrate, GaN-on-Si epitaxy also has the advantages of large size and compatibility of the chip production process with the existing silicon process. However, due to the large mismatch between the silicon substrate and the gallium nitrid...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66
CPCH01L22/12H01L22/14
Inventor 王荣华任永硕程万希宋书宽高珺梁辉南
Owner 润新微电子(大连)有限公司
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