A sic MOSFET bridge arm crosstalk suppression driving circuit with variable turn-off negative voltage and control method

Abstract

The present invention relates to a SiC MOSFET bridge arm crosstalk suppressing drive circuit and control method for changing and shutting off negative voltage. The circuit includes first, second, third and fourth voltage totem pole structure circuits, first and second drive resistor circuits, , two low-impedance loops and upper and lower tubes; the first voltage totem pole structure circuit is connected to the second voltage totem pole structure circuit; the second voltage totem pole structure circuit is connected to the first driving resistance circuit, and the first driving resistance circuit is connected to the upper The first low-impedance loop is connected between the tubes; the third voltage totem pole structure circuit is connected to the fourth voltage totem pole structure circuit; the fourth voltage totem pole structure circuit is connected to the second drive resistance circuit, and the second drive resistance circuit is connected to the lower tube The second low-impedance loop is connected between them; the upper pipe is connected with the lower pipe. The invention can give full play to the performance advantages of the SiC MOSFET high-speed switch, realize the crosstalk suppression function of the bridge arm, and increase the driving voltage at the moment of turning off, realize high-speed switching, and reduce the loss of the switching tube.

Description

technical field [0001] The invention belongs to the technical field of SiC MOSFET driving design, and in particular relates to a SiC MOSFET bridge arm crosstalk suppressing driving circuit and a control method for changing and turning off negative pressure. Background technique [0002] Compared with Si (silicon) devices, SiC (silicon carbide) devices have wider band gap, higher thermal conductivity, higher critical field strength and faster electron migration rate. It has obvious advantages in switching speed and operating frequency, and is suitable for high-speed and high-power applications. However, in the bridge arm circuit, due to the high switching speed of the SiC MOSFET, the upper and lower transistors of the same bridge arm generate a large du / dt and di / dt during the switching process. At this time, the existence of parasitic parameters will cause the same bridge Crosstalk voltage appears on the gate-source of the other switching tube of the arm, and bridge-arm cro...

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Problems solved by technology

[0004] Purpose of the invention: In order to solve the above-mentioned problems of low switching speed, large loss, short device life, and inability to suppress negative crosstalk voltage, the present invention provides a SiC MOSFET bridge arm crosstalk suppression drive circuit and control method with variable turn-off negative voltage

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