Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Near-net forming die and near-net forming method for high-silicon aluminum alloy shell

A high-silicon aluminum alloy, near-net forming technology, applied in the field of near-net forming of high-silicon aluminum alloy shells, can solve the problems of strict parameter requirements, low product efficiency, and many processing steps, so as to reduce subsequent processing, Small dimensional deviation and the effect of reducing the amount of processing

Active Publication Date: 2021-01-22
CENT SOUTH UNIV
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In recent years, it is not uncommon to see silicon-aluminum alloys as electronic packaging materials, but the processing steps are many and complicated, the parameter requirements are relatively strict, and the finished product efficiency is low

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Near-net forming die and near-net forming method for high-silicon aluminum alloy shell
  • Near-net forming die and near-net forming method for high-silicon aluminum alloy shell
  • Near-net forming die and near-net forming method for high-silicon aluminum alloy shell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] The present invention will be further described below by taking the preparation of an Al-50Si alloy shell for electronic packaging as an example.

[0053] The mold used in this embodiment uses high-strength, high-density, and high-purity graphite as a raw material, and is processed by ordinary turning. The long and short side pressure plates and the upper and lower pressure blocks are not allowed to be chamfered. like figure 1 As shown, the length, height and thickness of the short side pressure plates (1a) and (3a) are respectively 50mm×50mm×12mm. The length, height and thickness of long side pressing plate (2b) and (4b) are respectively 74mm * 50mm * 12mm. The length, width and height of the upper pressing block 5 are respectively 50mm * 50mm * 30mm. The length, width and height of the lower pressing block 6 are respectively 50mm×50mm×30mm, and the boss 7 is located in the middle, and the size is 40mm×40mm×5mm.

[0054] Adopt this mould, the forming method of Al-50...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a near-net-shape forming mold and near-net-shape forming method of a high-silicon aluminum alloy shell. The mold comprises long side pressing plates, short side pressing plates,an upper pressing block, a lower pressing block and a steel sleeve, wherein the long side pressing plates and the short side pressing plates are assembled into a mold frame, and the mold frame is provided with a mold cavity with an upper opening and a lower opening; and the upper pressing block and the lower pressing block can move in a reciprocating mode in the mold cavity, the top surface of the lower pressing block is provided with a boss, and the combined mold is fixed by the steel sleeve. The near-net-shape forming method of the high-silicon aluminum alloy shell comprises the following steps that gas atomization is conducted to prepare powder to obtain an aluminum-silicon raw material, a graphite mold is subjected to surface coating, drying and combination, then the raw material is flatly laid in the mold for pressure sintering, and mold stripping is conducted to obtain an aluminum-silicon shell material. According to the near-net-shape forming mold and near-net-shape forming method of the high-silicon aluminum alloy shell, the mold design is combined with the pressure sintering to directly manufacture the high-silicon aluminum alloy electronic packaging shell, the productionefficiency and the raw material utilization rate are improved, the preparation process is controllable, and is good in stability, and the method has extremely high industrial application value, and can be popularized to the manufacturing of other metal materials.

Description

technical field [0001] The invention relates to a near-net forming method of a high-silicon aluminum alloy shell, in particular to preparing an electronic packaging shell material with a near-net size through design and assembly of a mold and pressure sintering. Background technique [0002] Electronic packaging materials are base materials used to carry electronic devices and their interconnections, and play the roles of mechanical support, sealing environment protection, signal transmission, heat dissipation and shielding. According to the packaging structure, electronic packaging materials mainly include substrates, wiring, interlayer dielectrics and sealing materials; according to the packaging form, they can be divided into hermetic packaging and physical packaging; according to the material composition, they can be divided into ceramic-based, plastic-based and metal-based electronic packaging materials. The research, development and application of electronic packaging ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): B22F3/03B22F3/16
CPCB22F3/03B22F3/16B22F2998/10B22F9/082B22F2003/026B22F3/02B22F3/1017
Inventor 蔡志勇王日初彭超群冯艳王小锋
Owner CENT SOUTH UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products