The layout of the silicon-based inductor structure and its closed lines
A closed wire, inductive coil technology, applied in the direction of inductors, circuits, electrical components, etc., can solve the problems of high process difficulty and low cost performance.
Active Publication Date: 2020-11-24
SHANGHAI HUALI INTEGRATED CIRCUIT CORP
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Problems solved by technology
[0004] However, even if these methods are adopted, the loss of the substrate cannot be completely avoided, and even new losses are caused, and the cost performance is low, and the process is difficult
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[0029] The technical solutions in the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0030] In an embodiment of the present invention, a silicon-based inductor structure is provided to improve the quality factor of the silicon-based inductor and reduce the loss of the silicon-based inductor. see figure 1 , figure 1 It is a schematic structural diagram of a silicon-based inductor according to an embodiment of the present invention, such as figure 1 As shown, the silicon-based inductor structure of the present invention includes:
[0031] A substrate 100, such as a silicon substrate.
[0032] Th...
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The invention relates to a silicon-based inductor structure, and relates to a semiconductor integrated circuit. The silicon-based inductor structure comprises: a substrate; an inductor coil on the substrate; a closed metal line and a closed polysilicon line; the closed metal line and the closed polysilicon line are located between the substrate and the inductive coil, the closed metal line is located above the closed polysilicon line, the closed metal line is connected to the closed polysilicon line through a through hole, and the closed metal line is grounded; the closed metal line includes aplurality of adjacent line segments, the closed polysilicon line includes a plurality of adjacent line segments, and under the inductive magnetic field transformation, complementary currents in opposite directions are generated between the adjacent line segments of the closed metal line, and complementary currents in opposite directions are generated between the adjacent lines of the closed polysilicon line segments; and the substrate loss is reduced, and the quality factor of the inductor is effectively improved.
Description
technical field [0001] The invention relates to a semiconductor integrated circuit, in particular to a silicon-based inductance structure and the layout of closed lines therein. Background technique [0002] In semiconductor integrated circuits, in recent years, with the rapid development of wireless mobile communication technology, the demand for low-cost, high-performance on-chip radio frequency devices is also increasing. In order to meet the requirements of high integration, silicon-based inductors such as on-chip silicon-based spiral inductors have become key components in communication modules such as voltage-controlled oscillators, low-noise amplifiers, mixers, and intermediate frequency filters. An important index to measure the performance of inductors is the quality factor. Its definition is: the ratio of the energy stored in the inductor to the energy lost in each oscillation cycle. A higher quality factor indicates a higher inductor efficiency. The influencing...
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IPC IPC(8): H01L23/64H01L23/552
CPCH01L23/552H01L28/10
Inventor 晏颖金建明龚政
Owner SHANGHAI HUALI INTEGRATED CIRCUIT CORP