A gallium nitride-based light-emitting diode epitaxial wafer, chip and preparation method thereof

Abstract

The invention discloses a gallium nitride-based light-emitting diode epitaxial wafer, a chip and a preparation method thereof, belonging to the technical field of semiconductors. The gallium nitride-based light-emitting diode epitaxial wafer includes a substrate, an N-type semiconductor layer, an active layer, a P-type semiconductor layer, and a contact layer, and the N-type semiconductor layer, the active layer, and the P-type semiconductor layer and the contact layer are sequentially stacked on the substrate; the contact layer includes a first sublayer and a second sublayer stacked in sequence, and the first sublayer is a P-type doped GaN layer or an N-type doped GaN layer. doped GaN layer, the second sublayer is Bi 2 o 2 Se film. The present invention adopts P-type doped GaN layer or N-type doped GaN layer and Bi 2 o 2 The Se thin films are stacked to form a contact layer, and the Bi 2 o 2 The mobility of carriers in the Se thin film is very high, which can effectively improve the charge expansion ability of the contact layer and improve the current congestion caused by poor crystal growth quality.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a gallium nitride-based light-emitting diode epitaxial wafer, a chip and a preparation method thereof. Background technique [0002] A light-emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. Gallium nitride (GaN) has good thermal conductivity, and has excellent characteristics such as high temperature resistance, acid and alkali resistance, and high hardness, so that gallium nitride (GaN)-based LEDs have received more and more attention and research. [0003] Epitaxial wafers are the primary products in the LED manufacturing process. The existing LED epitaxial wafer includes a substrate, an N-type semiconductor layer, an active layer and a P-type semiconductor layer, and the N-type semiconductor layer, the active layer and the P-type semiconductor layer are sequentially stacked on the substrate...

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Problems solved by technology

[0007] The embodiment of the present invention provides a gallium nitride-based light-emitting diode epitaxial wafer and a preparation method thereof, which can solve the problem of high defect density caused by heavy doping of the contact layer in the prior art and the movement of bound carriers

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