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Synthetic method of zinc stannate nanomaterial for n-type transparent semiconductor film

A technology of nano-zinc stannate and synthesis method, which is applied in the fields of nanotechnology, tin compounds, and nanotechnology for materials and surface science, can solve problems such as affecting the light transmittance of nanocrystalline films, and achieve high electrical conductivity, high Effect of Electron Mobility

Inactive Publication Date: 2019-04-26
TIANJIN UNIVERSITY OF TECHNOLOGY +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The currently reported nano-zinc stannate preparation methods are mostly used in the field of photocatalysis and flame retardant materials. The prepared nanoparticles have a large number of agglomerations, which seriously affects the light transmittance of the prepared nanocrystalline film.

Method used

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  • Synthetic method of zinc stannate nanomaterial for n-type transparent semiconductor film
  • Synthetic method of zinc stannate nanomaterial for n-type transparent semiconductor film
  • Synthetic method of zinc stannate nanomaterial for n-type transparent semiconductor film

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Embodiment 1

[0034] A kind of synthetic method for the nano zinc stannate material of n-type transparent semiconductor film, the steps are as follows:

[0035] 1) Preparation of molar ratio Zn:Sn=2:1 precursor

[0036] Weigh SnCl 4 12.547g, according to the ratio of each component of the above precursor solution according to SnCl 4 The amount to determine the ZnCl 2 amount. ZnCl 2 Easy to deliquescence, weighing must be fast, called ZnCl 2 13.12g and dissolved with an appropriate amount of deionized water (the amount of deionized water should not exceed the quality of the final precursor solution, generally enough to dissolve ZnCl 2 can), after stirring and cooling down to room temperature, the SnCl 4 with ZnCl 2 Quickly mix the aqueous solution, stir to dissolve and mix evenly and cool down to room temperature, then add an appropriate amount of deionized water (the final solution quality is determined according to the ratio of the components of the above-mentioned precursor solutio...

Embodiment 2

[0041] A kind of synthetic method for the nano zinc stannate material of n-type transparent semiconductor film, the steps are as follows:

[0042] 1) Preparation of molar ratio Zn:Sn=2:1 precursor

[0043] Consistent with embodiment 1 scheme

[0044] Weigh SnCl 4 12.55g, according to the ratio of each component of the above precursor solution according to SnCl 4 The amount to determine the ZnCl 2 amount. ZnCl 2 Easy to deliquescence, weighing must be fast, called ZnCl 2 13.12g and dissolved with an appropriate amount of deionized water (the amount of deionized water should not exceed the quality of the final precursor solution, generally enough to dissolve ZnCl 2 can), after stirring and cooling down to room temperature, the SnCl 4 with ZnCl 2Quickly mix the aqueous solution, stir to dissolve and mix evenly and cool down to room temperature, then add an appropriate amount of deionized water (the final solution quality is determined according to the ratio of the compone...

Embodiment 3

[0049] A kind of synthetic method for the nano zinc stannate material of n-type transparent semiconductor film, the steps are as follows:

[0050] 1) Preparation of molar ratio Zn:Sn=2:1 precursor

[0051] Consistent with embodiment 1 scheme

[0052] Weigh SnCl 4 12.547g, according to the ratio of each component of the above precursor solution according to SnCl 4 The amount to determine the ZnCl 2 amount. ZnCl 2 Easy to deliquescence, weighing must be fast, called ZnCl 2 13.12g and dissolved with an appropriate amount of deionized water (the amount of deionized water should not exceed the quality of the final precursor solution, generally enough to dissolve ZnCl 2 can), after stirring and cooling down to room temperature, the SnCl 4 with ZnCl 2 Quickly mix the aqueous solution, stir to dissolve and mix evenly and cool down to room temperature, then add an appropriate amount of deionized water (the final solution quality is determined according to the ratio of the compo...

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Abstract

The invention discloses a synthetic method of a zinc stannate nanomaterial for an n-type transparent semiconductor film. Zinc chloride, tin chloride and tetrabutylammonium are coprecipitated in a certain ratio, and then the zinc stannate nanomaterial with particle size adjustable in the range of 30-300 nm is prepared through hydrothermal synthesis with stirring. As a novel semiconductor material,zinc stannate has the advantages of high stability and electron mobility and easy controllability in chemical composition and energy band structure, and has more application potential in the field ofthin-film photovoltaic cells such as dye-sensitized solar cells as compared with zinc oxide and tin chloride.

Description

technical field [0001] The invention belongs to the field of application of novel n-type transparent oxide semiconductor materials in photoelectric conversion technology, and in particular relates to the preparation of semiconductor nanometer zinc stannate. Background technique [0002] Dye-sensitized solar cells have attracted extensive attention from researchers at home and abroad because of their simple production process, low production cost, and adjustable spectral range. In the past three decades, the research on dye-sensitized solar cells has always revolved around broad-absorbing photosensitizing dyes, high-conductivity photoanodes, electrolytes with different redox potentials, and low-cost and highly catalytically active counter electrodes. [0003] Photoanodes are usually constructed of wide-bandgap nanocrystalline metal oxides to collect photo-generated electrons in dye-sensitized solar cells. So far, zinc oxide and tin oxide are non-titanium dioxide wide bandgap...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G19/00B82Y30/00
CPCB82Y30/00C01G19/00C01P2004/03C01P2004/62C01P2004/64
Inventor 孙喆陶玲玲孙建东王鹏梁茂薛松
Owner TIANJIN UNIVERSITY OF TECHNOLOGY
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