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Method for simulating volt-ampere characteristic of Langmuir probe in plasma environment

A Langmuir probe and plasma technology, applied in the field of Langmuir probe volt-ampere characteristic simulation device, can solve the problem of high cost of use

Active Publication Date: 2019-04-26
LANZHOU INST OF PHYSICS CHINESE ACADEMY OF SPACE TECH
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  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] When using the Langmuir probe on the ground, a plasma environment is required, and the use of the plasma environment generation device is very expensive

Method used

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  • Method for simulating volt-ampere characteristic of Langmuir probe in plasma environment
  • Method for simulating volt-ampere characteristic of Langmuir probe in plasma environment
  • Method for simulating volt-ampere characteristic of Langmuir probe in plasma environment

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Embodiment Construction

[0017] The present invention will be described in detail below with reference to the accompanying drawings and examples.

[0018] The volt-ampere characteristic curve of the Langmuir probe can be divided into two parts: the positive characteristic curve area and the negative characteristic curve area. According to the idea of ​​reverse design, the present invention, such as figure 1 and 2 As shown, the simulation device of the present invention is implemented by combining the principles of the voltage-current characteristics of two triodes, and the diode is used to select the positive and negative characteristic curve areas. The device circuit is composed of resistors, diodes, triode discrete components and power supply, specifically including diodes D1, D2, NPN transistor Q1, PNP transistor Q2, power supply U1, U2 of two transistors, and DC scanning voltage source: power supply U1 The resistor R1 is connected in series between the anode and the base of the transistor Q1, th...

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Abstract

The invention discloses a method for simulating the volt-ampere characteristic of a Langmuir probe in a plasma environment. According to the reversal design thought, the device is achieved by combining the volt-ampere characteristic theories of two kinds of triodes, and a diode is used for gating of a positive and negative characteristic curve area; different from a digital control mode frameworkof a microcomputer, the device is achieved through a pure artificial circuit and is simple in structure and easy to achieve, and the volt-ampere characteristic of the Langmuir probe in the actual plasma environment can be simulated simply by changing part of element parameters.

Description

technical field [0001] The invention belongs to the technical field of space physics detection, and in particular relates to a volt-ampere characteristic simulation device of a Langmuir probe in a plasma environment. Background technique [0002] The working principle of the Langmuir probe is to immerse the sensor in the plasma, and the sensor will collect electrons and ions in the plasma to form a current. When a scanning voltage is applied to the sensor, the plasma current collected by the sensor will scan with the external The voltage changes, so as to obtain the volt-ampere characteristic curve of the interaction between the sensor and the plasma. By analyzing the volt-ampere characteristic curve, parameters such as plasma density, temperature and potential can be obtained. [0003] When the Langmuir probe is used on the ground, a plasma environment is required, and the cost of using a device for generating the plasma environment is high. Contents of the invention ...

Claims

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Application Information

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IPC IPC(8): H05H1/00G09B23/18
CPCG09B23/187H05H1/0075
Inventor 李得天胡向宇赵振栋陈光锋田恺王栋蔺璟陶文泽
Owner LANZHOU INST OF PHYSICS CHINESE ACADEMY OF SPACE TECH
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