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Surface-modified colloidal ceria abrasive particles, preparation method therefor, and polishing slurry composition containing same

A cerium oxide and surface modification technology, which is applied in the direction of polishing compositions containing abrasives, chemical instruments and methods, cerium oxide/cerium hydroxide, etc., can solve the problem of fragility of film surface defects, rising unit price of polishing slurry, It is difficult to ensure the repeatability of manufacturing engineering and polishing engineering to achieve the effect of increasing specific surface area and increasing reactivity

Active Publication Date: 2019-04-26
K C TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the solid content is increased or the polishing particle size is increased, it is vulnerable to surface defects of the film quality of the polishing object, and has the disadvantage of increasing the unit price of the polishing slurry.
In addition, it is difficult to ensure the repeatability of the manufacturing process and polishing process by mixing and using other different polishing particle sizes or doping multiple metals in the polishing particles, or composite polishing particles.

Method used

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  • Surface-modified colloidal ceria abrasive particles, preparation method therefor, and polishing slurry composition containing same
  • Surface-modified colloidal ceria abrasive particles, preparation method therefor, and polishing slurry composition containing same
  • Surface-modified colloidal ceria abrasive particles, preparation method therefor, and polishing slurry composition containing same

Examples

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Effect test

Embodiment 1

[0081] The colloidal ceria polishing particles of 60nm size as the polishing particles and the cerium ammonium nitrate as the cerium precursor are mixed with a weight ratio of 0.15 (colloidal ceria polishing particles / cerium precursor) and stirred at 70°C at a speed of 300rpm 1 hour. Next, ammonium hydroxide was added as a precipitant, and the mixture was stirred at 70 and 300 rpm for 1 hour to prepare a reaction solution with pH 10. Afterwards, the reaction solution was hydrothermally synthesized at a temperature of 250° C. and a pressure of 30 bar for 12 hours, and then washed with deionized water to produce surface-modified colloidal ceria polishing particles.

Embodiment 2

[0083] In Example 1, except that the weight ratio of colloidal ceria polishing particles / cerium precursor was 0.76, the surface-modified colloidal ceria polishing particles were produced in the same manner as in Example 1.

Embodiment 3

[0085] In Example 1, except that the weight ratio of colloidal ceria polishing particles / cerium precursor was 1.52, the surface-modified colloidal ceria polishing particles were produced in the same manner as in Example 1.

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PUM

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Abstract

The present invention relates to surface-modified colloidal ceria abrasive particles, a preparation method therefor, and a polishing slurry composition containing the same. According to one embodimentof the present invention, the surface-modified colloidal ceria abrasive particles comprise: colloidal ceria abrasive particles; and cerium atoms and hydroxyl groups (-OH) formed on the surface of thecolloidal ceria abrasive particles.

Description

technical field [0001] The present invention relates to surface-modified colloidal ceria polishing particles, a method for producing the same, and a polishing slurry composition comprising the same. Background technique [0002] Chemical Mechanical Polishing (CMP) is a process in which the surface of a semiconductor wafer is contacted with a polishing pad, rotated and polished using a polishing agent and a slurry containing various chemical substances. CMP slurry can be classified according to the polishing object. Roughly with insulating film polishing slurry, silicon dioxide (SiO2) for polishing insulating layer 2 ), silicon nitride (Si 3 N 4 ) and other insulating films, and metal polishing slurry to polish metal wiring layers such as copper, tungsten, and aluminum layers. In order to polish the oxide film, increase the solid content of the polishing particles, or increase the particle size or mix other different polishing particle sizes to increase the surface contac...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K3/14C09G1/02C01F17/235
CPCC09G1/02C09K3/1463C09K3/1436C01P2004/04C01P2004/32C01P2004/62C01P2004/64C01P2006/12C01P2002/72C01F17/235C09K3/1409C09K3/1445
Inventor 崔洛炫朴光洙金廷润黄晙夏
Owner K C TECH
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