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Three-dimensional orientation controllable single crystal part directional solidification starting end structure and directional solidification method for seed crystal method

A technology of directional solidification and three-dimensional orientation, which can be used in self-solidification methods, chemical instruments and methods, single crystal growth, etc., and can solve problems such as uncontrollable secondary orientation of single crystals.

Inactive Publication Date: 2019-04-30
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In order to overcome the deficiency that the traditional cylindrical seed technology cannot control the secondary orientation of the single crystal, the purpose of the present invention is to provide a directional solidification starting end structure and a directional solidification method for the three-dimensional orientation of the single crystal part that are used in the seed crystal method. The structure and method can not only control the three-dimensional orientation of single crystal castings, but also avoid the disadvantage of heterocrystal nucleation caused by seed crystal oxidation, and significantly improve the success rate of growing single crystals

Method used

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  • Three-dimensional orientation controllable single crystal part directional solidification starting end structure and directional solidification method for seed crystal method
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  • Three-dimensional orientation controllable single crystal part directional solidification starting end structure and directional solidification method for seed crystal method

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Embodiment 1

[0031] Such as figure 1 As shown, the starting end structure includes a cylindrical seed cavity 1 with a secondary orientation reference plane at the lower end, a constriction 2 connected to the top of the seed cavity 1, and a single crystal plate or single crystal casting connected to the upper end of the constriction 2 The cavity 3, the diameter of the cylindrical seed crystal cavity is 2.5-3 times the diameter of the constriction, and the height of the seed crystal is 0.5-0.8 times the height of the seed crystal cavity;

[0032] The diameter of the seed crystal cavity is 10 mm, the height is 20 mm, the width of the secondary reference plane is 8 mm; the diameter of the constriction is 4 mm, and the height is 6 mm.

[0033] A second-generation single crystal superalloy with a Re content of 3% was used to grow a single crystal by the seed crystal method in an industrial large-scale dual-zone heating ZGD-15 vacuum single crystal furnace, and a total of two different secondary ...

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Abstract

The invention discloses a three-dimensional orientation controllable single crystal part directional solidification starting end structure and directional solidification method for a seed crystal method, and belongs to the technical field of single crystal orientation solidification. The directional solidification starting end structure comprises a seed crystal cavity with a secondary orientationreference surface ii, a necking neck connected with the top end of the seed crystal cavity, and a cavity connected with the upper end of the necking neck; the diameter of the cylindrical seed crystalcavity is 2.5-3 times of the diameter of the necking neck, the seed crystal height is 0.5-0.8 times of the height of the seed crystal cavity, and the width of the secondary orientation reference surface is 0.6-0.8 times of the diameter of the seed crystal. According to the method disclosed by the invention, the three-dimensional orientation of a single crystal cast piece is accurately controlled by cutting cylindrical seed crystals with a secondary orientation reference surface I and at the same time controlling first and second orientation of a single crystal plate, meanwhile a reasonable seed crystal size and structural proportion are selected, and the upper end of the seed crystal is conveniently controlled to be partially melted, so that crystal growth is carried out by taking the seedcrystal as a core. The method can be used for controlling the three-dimensional orientation of the single crystal cast piece by using the seed crystal method and improving the success rate of the single crystal.

Description

technical field [0001] The invention relates to the technical field of directional solidification of single crystals, in particular to a directional solidification starting end structure and a directional solidification method of a single crystal part with controllable three-dimensional orientation for a seed crystal method. Background technique [0002] The most notable feature of single crystal superalloys is anisotropy. For single crystal blades, not only the primary orientation parallel to the axial direction has a significant impact on the performance of the blade, but the secondary orientation perpendicular to the axial direction will also affect the performance of the blade. performance has a significant impact. The crystal selection method based on the principle of preferential growth can only prepare single crystals with [001] orientation, and cannot control the secondary orientation of single crystals. In the traditional seed crystal technology, a complete cylindr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B11/14
CPCC30B11/006C30B11/14
Inventor 刘金来孟杰周亦胄孙晓峰
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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