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Cleaning method for removing tantalum nitride film attached to surface of metal substrate

A metal matrix, tantalum nitride technology, used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as low work efficiency, and achieve the effects of simple technology, easy implementation, and low equipment cost

Inactive Publication Date: 2019-05-07
富乐德科技发展(天津)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the prior art, in the copper interconnection, the removal of the tantalum nitride film is the method of chemical mechanical polishing (CMP), that is, after the copper film is plated, CMP is required to planarize the surface so that the copper on the surface is removed. Then continue to grind off the tantalum nitride barrier layer on the surface. The above method is more responsible, and the work efficiency is also low.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] The technical scheme that the present invention takes for solving the technical problem existing in known technology is:

[0020] The cleaning method for removing the tantalum nitride film attached to the surface of the metal substrate of the present invention comprises the following steps:

[0021] A. Put the etched metal substrate into the reaction chamber;

[0022] B. The reaction chamber is filled with a mixed gas of oxygen and carbon tetrafluoride, and the volume ratio of oxygen to carbon tetrafluoride is 2:3;

[0023] C. Raise the temperature of the reaction chamber and keep it at 130°C, and evacuate the reaction chamber to 5 Torr;

[0024] D. Using 200 watts of plasma to perform reactive etching on the metal substrate, and remove the tantalum nitride film on the surface of the metal substrate after 30 minutes of reaction.

[0025] Most of the tantalum nitride film on the surface of the metal substrate after cleaning has been removed, and the expected cleaning e...

Embodiment 2

[0027] The technical scheme that the present invention takes for solving the technical problem existing in known technology is:

[0028] The cleaning method for removing the tantalum nitride film attached to the surface of the metal substrate of the present invention comprises the following steps:

[0029] A. Put the etched metal substrate into the reaction chamber;

[0030] B. The reaction chamber is filled with a mixed gas of oxygen and carbon tetrafluoride, and the volume ratio of oxygen to carbon tetrafluoride is 2:5;

[0031] C. Raise the temperature of the reaction chamber and keep it at 180°C, and evacuate the reaction chamber to 15Torr;

[0032] D. Using 700 watts of plasma to perform reactive etching on the metal substrate, and remove the tantalum nitride film on the surface of the metal substrate after 80 minutes of reaction.

[0033] After cleaning, the tantalum nitride film on the surface of the metal substrate has been removed, and the expected cleaning effect c...

Embodiment 3

[0035] The cleaning method for removing the tantalum nitride film attached to the surface of the metal substrate of the present invention comprises the following steps:

[0036] A. Put the etched metal substrate into the reaction chamber;

[0037] B. The reaction chamber is filled with a mixed gas of oxygen and carbon tetrafluoride, and the volume ratio of oxygen to carbon tetrafluoride is 1:2;

[0038] C. Raise the temperature of the reaction chamber and keep it at 160°C, and evacuate the reaction chamber to 8Torr;

[0039] D. Using 600 watts of plasma to perform reactive etching on the metal substrate, and remove the tantalum nitride film on the surface of the metal substrate after 60 minutes of reaction.

[0040] Most of the tantalum nitride film on the surface of the metal substrate after cleaning has been removed, the expected cleaning effect can be achieved, and an optimal balance is achieved in terms of processing time, effect and implementation cost.

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PUM

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Abstract

A cleaning method for removing a tantalum nitride film attached to a surface of a metal substrate. The method comprises the following steps of: putting an etched metal substrate into a reaction chamber; filling the reaction chamber with a mixed gas of oxygen and carbon tetrafluoride, wherein the volume ratio of the oxygen and the carbon tetrafluoride is 2:3-2:5; allowing the reaction chamber to perform temperature rise and maintain the temperature in a range of 130-180 DEG C, and performing vacuum supply for the reaction chamber to 5-15 Torr; and employing the plasma with 200-700 watts of power for reaction etching of a metal substrate, performing reaction for 30-80min to remove the tantalum nitride film at the surface of the metal substrate. The cleaning method provided by the invention can remove the tantalum nitride film left at the surface of the metal substrate, is simple in technology and easy to implement, and can allow the reaction chamber to use the same reaction chamber whenthe metal substrate is normally etched, and the device cost is lower.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a cleaning method for removing a tantalum nitride film attached to the surface of a metal substrate. Background technique [0002] At present, the semiconductor industry adopts a damascene process to prepare copper interconnection structures. In this method, a PVD method is used to deposit a thin film structure of tantalum nitride (TaN) as a diffusion barrier layer of copper in the etched through holes and grooves, and then A thicker copper seed layer is then deposited and a subsequent copper electroplating process is performed. Because tantalum nitride has high conductivity, high thermal stability and blocking effect on foreign atoms, and because of the inertness of copper nitride to copper, it is not easy to form compounds between Cu and Ta and Cu and N. [0003] In the prior art, in the copper interconnection, the removal of the tantalum nitride film is th...

Claims

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Application Information

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IPC IPC(8): H01L21/3065
Inventor 穆帅帅贺贤汉
Owner 富乐德科技发展(天津)有限公司
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