Check patentability & draft patents in minutes with Patsnap Eureka AI!

Monocrystalline silicon piece inverted pyramid raising aid and application thereof

A single crystal silicon wafer and inverted pyramid technology, which is applied in the directions of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of poor effect, low cashmere rate, and different sizes of inverted pyramid structures, and achieve improved detachment Foaming effect, high cashmere yield and good appearance

Active Publication Date: 2019-05-14
CHANGZHOU SHICHUANG ENERGY CO LTD
View PDF10 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the effect of the metal-assisted method on monocrystalline silicon wafers is not good. The single-crystalline silicon wafers made by the metal-assisted method often have poor appearance such as bubble marks and stuck marks, and the prepared inverted pyramid structures are of different sizes. Low cashmere

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Monocrystalline silicon piece inverted pyramid raising aid and application thereof
  • Monocrystalline silicon piece inverted pyramid raising aid and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] The specific implementation manners of the present invention will be further described below in conjunction with the drawings and examples. The following examples are only used to illustrate the technical solution of the present invention more clearly, but not to limit the protection scope of the present invention.

[0024] The technical scheme of concrete implementation of the present invention is:

[0025] A kind of inverted pyramid texturing method of monocrystalline silicon chip, its concrete steps comprise:

[0026] 1) Preparation of auxiliary agents: 0.5% to 1% polyaspartic acid, 0.2% to 0.5% betaine, 1% to 3% polyvinyl alcohol, 1% to 3% gelatin , 0.2% to 0.5% of fluorocarbon surfactant is added to the remaining water, and mixed evenly to form an auxiliary agent;

[0027] 2) Prepare the texturing liquid: add the auxiliary agent prepared in step 1) to the acid solution containing metal ions, and mix evenly to prepare the texturing liquid;

[0028] 5% to 30% of H...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a monocrystalline silicon piece inverted pyramid raising aid and application thereof. The aid comprises the following components: polyaspartic acid, glycine betaine, polyvinyl alcohol, gelatin, a fluorocarbon surfactant and water. The aid can be used with an acid raising liquid with metallic ions to assist the acid raising liquid to implement raising of a monocrystalline silicon piece; the aid is capable of controlling hole digging and expansion directions and speeds in raising, improving defoaming effects and solution infiltration, and removing microstructures, and thusan inverted pyramid raising fabric of a good appearance, a uniform structure and a high raising rate can be made.

Description

technical field [0001] The invention relates to an auxiliary agent for making monocrystalline silicon chip inverted pyramid texture and its application. Background technique [0002] As an effective method to solve the difficulty of diamond wire silicon wafer texturing, the metal-assisted texturing method has been applied maturely on polycrystalline silicon wafers. Many battery manufacturers in the market have adopted this method to prepare polycrystalline black silicon. However, the effect of the metal-assisted method on monocrystalline silicon wafers is not good. Monocrystalline silicon wafers made of metal-assisted methods often have poor appearance such as bubble marks and stuck marks, and the prepared inverted pyramid structures are of different sizes. The cashmere rate is low. The monocrystalline silicon wafer prepared by the metal-assisted method can obtain an inverted pyramid structure, which has the advantages of low reflectivity, high cell efficiency and high CTM ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B29/06C30B33/10
Inventor 章圆圆裴银强吕泳其
Owner CHANGZHOU SHICHUANG ENERGY CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com