Process for shortening diffusion time of triple diffuser

Abstract

The invention provides a process for shortening the diffusion time of a triple diffuser. The process includes following steps: placing a cleaned diffuser into a container for pre-diffusion and performing swinging, putting the cleaned diffuser into a pre-diffusion furnace for pre-diffusion, putting the diffuser through completion of pre-diffusion into a primary diffusion furnace for primary diffusion, performing primary diffusion postprocessing on the diffuser after completion of primary diffusion, performing second pre-diffusion on the diffuser through completion of primary diffusion processing in the pre-diffusion furnace, performing second primary diffusion on the diffuser through completion of second pre-diffusion in the primary diffusion furnace, and conducting a furnace-outlet test onthe diffuser after completion of the second primary diffusion. The beneficial effects of the process are that second pre-diffusion and primary diffusion are performed on the diffuser, the diffusion time of the diffuser can be greatly shortened, the primary diffusion time of the diffuser is shortened to 70-90 hours from original 130-150 hours, and the diffusion efficiency is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor wafer manufacturing, and in particular relates to a process for shortening the diffusion time of three diffusion sheets. Background technique [0002] The conventional phosphorus diffusion method mainly includes the following steps: (1) high-temperature phosphorus diffusion, the diffusion temperature is usually 840-860°C; (2) constant-temperature propulsion, the propulsion temperature is usually 840-860°C. The one-time diffusion process makes the diffusion time of the diffusion sheet long during diffusion, reaching 130-150h, and the diffusion efficiency is low. Contents of the invention [0003] The problem to be solved by the present invention is to provide a process for shortening the diffusion time of the three-diffusion sheet, which is especially suitable for use in the diffusion of semiconductor silicon wafers. The diffusion sheet is subjected to two pre-diffusion and main diffusion, ...

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