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Method for preparing stoichiometric proportion lithium niobate or lithium tantalate wafer

A stoichiometric ratio, lithium niobate technology, applied in chemical instruments and methods, single crystal growth, crystal growth, etc., can solve the problems of low yield, uneven distribution of components, and uncontrollable lithium content.

Inactive Publication Date: 2008-10-01
NANKAI UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] 1. The flux method can only obtain crystals with a lithium molar content of about 49.5 mol%, and the components of the upper and lower parts of the crystals are uneven, the optical quality is very poor, and the growth rate is slow, so it is difficult to have practical value
[0010] 2. Double crucible technology equipment is complicated, the yield is low, and the cost is high
[0011] 3. In the traditional gas phase equilibrium method, the lithium in the atmosphere is provided by ceramics fired with lithium oxide and niobium oxide. The lithium content in the atmosphere cannot be adjusted, the method is complicated, and the ceramics cannot be reused after a period of time, and the cost is high.
[0012] 4. Like the flux method, the zone melting method cannot obtain crystals with a lithium content closer to the stoichiometric ratio, and the component distribution is uneven, the optical quality is poor, the yield is low, and a large amount of crystals at the zone melting tail are wasted

Method used

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  • Method for preparing stoichiometric proportion lithium niobate or lithium tantalate wafer

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Experimental program
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Effect test

Embodiment 1

[0026] Technical scheme of the present invention constitutes as figure 1 As shown, in the airtight container 1, pack 5 pieces of lithium niobate wafers 6 placed on the wafer holder 5, the thickness of the wafer 6 is 0.6mm, and the diameter is 78mm. Lithium serves as the evaporation source container 3 of the evaporation source 4 .

[0027] First turn on the vacuum pump, vacuumize the inside of the airtight container 1 to make the vacuum less than 0.5 Pa, then turn off the vacuum pump, utilize the heating body 2 to increase the temperature in the airtight container 1, the temperature is 1100 degrees Celsius; keep at this high temperature for 75 hours, Then cool down to room temperature, open the airtight container 1, and the required stoichiometric lithium niobate wafer can be produced. The detected lithium molar content of the wafer was 49.9mol%±0.1.

Embodiment 2

[0029] In the airtight container 1, pack 5 lithium niobate wafers 6 placed on the wafer holder 5, the thickness of the wafer 6 is 1.2mm, and the diameter is 78mm. Evaporation source container 3 for source 4.

[0030] After evacuating the inside of the airtight container 1 and raising the temperature, it is kept at 1100 degrees Celsius for 100 hours, and then lithium niobate wafers with the required stoichiometric ratio can be produced. The detected lithium molar content of the wafer was 49.9mol%±0.1. Others are with embodiment 1.

Embodiment 3

[0032] In airtight container 1, put into 5 slices of lithium niobate wafers 6 placed on wafer support 5, the thickness of wafer 6 is 0.8mm, and diameter is 76mm, puts into full bloom 30g lithium as evaporation source simultaneously on both sides of wafer 4 of the evaporation source container 3 .

[0033] Vacuumize the inside of the airtight container 1 to make the vacuum less than 0.5 Pa, then turn off the vacuum pump, fill in high-purity argon, make the air pressure in the container 1 about 1000 Pa, and keep it at 1100 degrees Celsius for 80 hours to obtain the required Stoichiometric lithium niobate wafers. The detected lithium molar content of the wafer was 49.8mol%±0.1. Others are with embodiment 1.

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Abstract

A method manufactures lithium niobate or lithium tantalite wafer in stoichiometric proportion. Specific process is that putting the lithium niobate or lithium tantalite wafer in a sealed container, vacuumizing inner side of the sealed container, enabling vacuum level to be less than 0.5 Pa and maintaining a certain high temperature in the container, regulating branch pressure of various components inside by highly purified argon to prevent from chap on surface of the wafer; processing 60h to 120h to obtain manufactures lithium niobate or lithium tantalite wafer in stoichiometric proportion. Compared with conventional method (patent application number; 0114332.4), firstly, the invention that replaces multi-crystal material with lithium-comprising compound, by repeat use, reduces cost greatly; secondly, the invention improves lithium content in the atmosphere, improves spread speed and reduces spread time; thirdly, regulating lithium content in the atmosphere by argon to use the lithium compound with different vapor tensions.

Description

【Technical field】: [0001] The invention belongs to the technical field of crystal preparation, and in particular relates to a method for manufacturing a stoichiometric ratio lithium niobate or lithium tantalate wafer used for piezoelectricity, electro-optic and the like. 【Background technique】: [0002] Since the lithium niobate crystal is not eutectic with the same composition, that is, the molten lithium niobate melt with the molar ratio Nb:Li=1, the crystallized solid composition is inconsistent with the melt composition, and its Nb:Li>1, so that the melt The composition of the crystal is constantly changing, and the composition of the crystalline solid is also constantly changing. Therefore, it is difficult to obtain lithium niobate crystals with uniform composition. The solid composition crystallized from the molten lithium niobate melt with a molar ratio of Nb:Li=51.4:48.6 is consistent with the melt composition, and it is relatively easy to obtain lithium niobate ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/30
Inventor 张玲孙军许京军孔勇发陈绍林刘士国黄自恒王红旗王占银楼慈波刘宏德高峰
Owner NANKAI UNIV
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