GaN-based light-emitting diode epitaxial wafer and manufacturing method thereof

Abstract

The invention discloses a gallium nitride-based light-emitting diode epitaxial wafer and a manufacturing method thereof, belonging to the technical field of semiconductors. The GaN-based light-emitting diode epitaxial wafer includes a substrate, an N-type semiconductor layer, an active layer, an electron blocking layer, and a P-type semiconductor layer, and the N-type semiconductor layer, the active layer, and the electron blocking layer and the P-type semiconductor layer are sequentially stacked on the substrate, the electron blocking layer includes a first sublayer, a second sublayer and a third sublayer stacked in sequence, and the material of the first sublayer is B x Ga 1‑x N, 0<x≤1, the material of the second sublayer is GaN, and the material of the third sublayer is B y Ga 1‑y N, 0<y≤1. The present invention can effectively reduce electron leakage and increase hole injection by inserting a GaN layer into a BGaN layer or a BN layer, and ultimately improve the luminous efficiency of the LED.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a gallium nitride-based light-emitting diode epitaxial wafer and a manufacturing method thereof. Background technique [0002] A light-emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. Due to the current improvement in the quality of gallium nitride (GaN)-based semiconductor materials and improvements in device manufacturing, GaN-based LEDs are expected to replace traditional incandescent and fluorescent lamps. [0003] Epitaxial wafers are the primary products in the LED manufacturing process. The existing LED epitaxial wafer includes a substrate, an N-type semiconductor layer, an active layer and a P-type semiconductor layer, and the N-type semiconductor layer, the active layer and the P-type semiconductor layer are sequentially stacked on the substrate. The substrate is used to provide a gr...

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Problems solved by technology

[0007] The embodiment of the present invention provides a gallium nitride-based light-emitting diode epitaxial wafer and its manufacturing method, which can solve the problem that the electron blocking layer in the prior art not only cannot effectively confine electrons in the active layer, but also blocks the P-type semiconductor layer. Provided holes are injected into the active layer, resulting in a decrease in the luminous efficiency of the LED

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