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Preparation method of infrared detector light trap structure

A technology of infrared detectors and optical traps, applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems such as difficult to achieve precise transfer, achieve the effect of detection and increase absorption

Active Publication Date: 2021-01-15
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when preparing a broadband infrared detector with an optical trap structure, it is difficult to achieve precise transfer of the micro-nano-sized optical trap structure.

Method used

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  • Preparation method of infrared detector light trap structure
  • Preparation method of infrared detector light trap structure
  • Preparation method of infrared detector light trap structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0066] Such as Figure 1 to Figure 5 As shown, (1) take an infrared material layer 10, which can be short-wave, medium-wave, long-wave, and very long-wave infrared materials, and the thickness is the sum of the thicknesses of several infrared material substrates and epitaxial layers.

[0067] (2) Uniformly deposit a layer of SiO on the surface of the infrared material layer 10 by plasma enhanced chemical vapor deposition 2 mask 20, the SiO 2 The thickness of the mask 20 is 1 / 4˜1 / 5 of the sum of thicknesses from the contact area to the absorption area on the infrared material layer 10 .

[0068] (3) Elemental metal is deposited on SiO by magnetron sputtering or electron beam evaporation 2 A metal mask 30 is deposited on the surface of the mask 20, and the thickness of the metal mask 30 is 50-70 nm.

[0069] Further, the elemental metal is a metal that has a relatively low deposition temperature and is easily dissolved by strong acid.

[0070] Furthermore, the elemental meta...

Embodiment 2

[0085] (1) Take an infrared material layer 10, which can be short-wave, medium-wave, long-wave, and very long-wave infrared materials, and the thickness is the sum of the thicknesses of several infrared material substrates and epitaxial layers.

[0086] (2) by plasma-enhanced chemical vapor deposition (uniformly depositing one layer of SiO on the surface of the infrared material layer 10 2 mask 20, the SiO 2 The thickness of the mask 20 is 1 / 4˜1 / 5 of the sum of thicknesses from the upper contact area to the absorption area of ​​the infrared material layer 10 .

[0087] (3) Elemental metal is deposited on SiO by magnetron sputtering or electron beam evaporation 2 A metal mask 30 is deposited on the surface of the mask 20, and the thickness of the metal mask 30 is 50-70 nm.

[0088] Further, the elemental metal is a metal that has a relatively low deposition temperature and is easily dissolved by strong acid.

[0089] Furthermore, the elemental metal includes metallic nickel,...

Embodiment 3

[0104] (1) Take an infrared material layer 10, which can be short-wave, medium-wave, long-wave, and very long-wave infrared materials, and the thickness is the sum of the thicknesses of several infrared material substrates and epitaxial layers.

[0105] (2) Uniformly deposit a layer of SiO on the surface of the infrared material layer 10 by plasma enhanced chemical vapor deposition 2 mask 20, the SiO 2 The thickness of the mask 20 is 1 / 4˜1 / 5 of the sum of thicknesses from the contact area to the absorption area on the infrared material layer 10 .

[0106] (3) Elemental metal is deposited on SiO by magnetron sputtering or electron beam evaporation 2 A metal mask 30 is deposited on the surface of the mask 20, and the thickness of the metal mask 30 is 50-70 nm.

[0107] Further, the elemental metal is a metal that has a relatively low deposition temperature and is easily dissolved by strong acid.

[0108] Furthermore, the elemental metal includes metallic nickel, metallic magn...

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Abstract

The invention discloses a preparation method of an infrared detector photon trap structure. By combining dry-wet etching with a corrosion process, pattern transfer among multiple masks such as an electron beam exposure glue layer, a metal mask and a SiO2 mask is realized, and finally, a photon trap structure is transferred to an infrared material layer with high accuracy. By using the method provided by the invention, a small-sized photon trap structure can be prepared on an infrared detector. The infrared detector photon trap structure prepared by the method provided by the invention can increase the light absorption of infrared detector materials, realize the detection of visible and infrared light by the infrared detector and improve the responsiveness, quantum effect and detection rateof broad-spectrum detectors.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a method for preparing an optical trap structure of a wide-spectrum infrared detector for extending visible light. Background technique [0002] Visible light-extended infrared detectors have been widely used in bionic technology, sensors, color imaging and other fields, and have attracted much attention. At present, the main way to realize a wide-spectrum detector is to design an infrared anti-reflection coating that can extend to visible light. Another method is to design nanowires on the detector. In addition, quantum wells and quantum dot structures in infrared detector materials are also used to enhance light absorption to achieve detection from visible light to infrared wavelengths. As a photonic crystal, the photon traps (PTs) structure is fabricated in the absorption region of the infrared detector, which can effectively enhance the light absorption of...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/109H01L31/0352H01L31/18H01L31/0236
CPCY02P70/50
Inventor 郭春妍魏思航蒋洞微王国伟徐应强汪韬牛智川
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI