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Copper base alloy for preparing high-conductivity films and sputtering target

A copper-based alloy, high-conductivity technology, used in sputtering, metal material coating, ion implantation, etc. The effect of increasing the film roughness and suppressing the oxidation of copper

Inactive Publication Date: 2019-05-28
广东迪奥应用材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] A kind of APC (silver-palladium-copper) alloy target material described in the patent application of patent publication number 106560457A is a case, but the system with silver base as the main material, the cost has been high all the time, so seek a low cost and can satisfy Materials required by the process become necessary

Method used

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  • Copper base alloy for preparing high-conductivity films and sputtering target

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] The copper-based alloy in this embodiment is copper-neodymium, and the specific ratio of the copper-neodymium alloy is: the mass ratio of copper is 97%, and the mass ratio of neodymium is 3%. The preparation steps of the copper-neodymium alloy target are as follows:

[0025] (1) Weigh the 4N high-purity copper ingot (purity is 99.99%) of 9.7 kilograms of weight and the 3N high-purity neodymium grain (purity is 99.9%) of 0.3 kilograms of weight with electronic scale for subsequent use.

[0026] (2) Start the vacuum induction melting furnace, and preheat the vacuum induction melting furnace for 20 minutes; first put in copper ingots, heat up until the copper ingots are completely melted; then put in metal neodymium, and keep it at a temperature of about 1200 ° C for about 30 minutes to form the above-mentioned Copper neodymium alloy liquid.

[0027] (3) Turn on the heater of the graphite mold to preheat the graphite mold to about 300°C and keep it warm; pour the copper-ne...

Embodiment 2

[0030] The copper-based alloy in this embodiment is copper-palladium, and the specific copper-palladium alloy ratio is: the mass ratio of copper is 99%, and the mass ratio of palladium is 1%. The preparation steps of the copper-palladium alloy target are as follows:

[0031] (1) Weigh the 4N high-purity copper ingot (purity is 99.99%) of 9.9 kilograms of weight with electronic scale and the 4N high-purity palladium pearl (purity is 99.99%) of 0.1 kilograms of weight for subsequent use.

[0032] (2) Start the vacuum induction melting furnace, and preheat the vacuum induction melting furnace for 20 minutes; first put in copper ingots, heat up until the copper ingots are completely melted; then put in metal palladium, and keep it at a temperature of about 1600 ° C for about 30 minutes to form the Copper palladium alloy liquid.

[0033] (3) Turn on the heater of the graphite mold to preheat the graphite mold to about 300°C and keep it warm; pour the copper-palladium alloy liquid i...

Embodiment 3

[0036] The copper-based alloy of this embodiment is copper-palladium-neodymium, and the specific copper-palladium-neodymium alloy ratio is: the mass ratio of copper is 98.8%, the mass ratio of palladium is 1.0%, and the mass ratio of neodymium is 0.2%. The target preparation steps are as follows:

[0037] (1) weigh the 4N high-purity copper ingot (purity is 99.99%) of 9.88 kilograms of weight with electronic scale, the 4N high-purity palladium pearl (purity is 99.99%) of 0.1 kilograms of weight and the 3N high-purity neodymium particle of 0.02 kilograms of weight ( The purity is 99.9%) for later use.

[0038] (2) Start the vacuum induction melting furnace, and preheat the vacuum induction melting furnace for 20 minutes; first put in copper ingots, heat up until the copper ingots are completely melted; then put in metal neodymium and palladium, and keep at a temperature of about 1600 ° C for about 30 minutes to form The copper palladium neodymium alloy liquid.

[0039] (3) Tu...

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Abstract

The invention discloses a copper base alloy for preparing high-conductivity films and a sputtering target. The copper base alloy comprises binary or ternary metal; the binary metal is copper neodymiumor copper palladium; and the ternary metal is copper aluminum neodymium, copper palladium neodymium, copper palladium silver, copper palladium bismuth, copper silver neodymium, copper neodymium bismuth or copper silver bismuth. The thermal performance of pure copper films is improved, and the roughness of the copper films is effectively inhibited, so that the wiring miniaturization is further developed.

Description

technical field [0001] The invention relates to the field of production of copper-based alloys and sputtering targets for low-resistance conductors, in particular to a copper-based alloy and sputtering targets for preparing high-conductivity thin films. Background technique [0002] In recent years, with the development of large-scale and high-definition screens such as 3D curved surface display, TFT-LCD and OLED, the requirements for low-cost low-resistance and low-stress wiring materials have become increasingly stringent, so low-resistance, low-stress high Pure aluminum has become a reliable object for people to choose, but aluminum still cannot meet the requirements of wire thinning, and silver is expensive, so copper has become a natural choice, which can improve the electromigration, oxidation and strength of the original pure copper process The problem is becoming more and more serious, and it is far from meeting the demand, and gradually develops into the copper allo...

Claims

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Application Information

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IPC IPC(8): C22C9/00C23C14/34
Inventor 黄华凛
Owner 广东迪奥应用材料科技有限公司