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Double-sided water-cooling heat dissipation structure of high-power-density IGBT module and processing technology

A high-power density, water-cooled heat dissipation technology, applied in semiconductor/solid-state device parts, semiconductor devices, electrical components, etc., can solve the problem of uneven heat dissipation of double-sided water-cooling, and achieve excellent lateral rapid thermal conductivity and environmental protection device reliability. , Solve the effect of water cooling uneven heat dissipation

Active Publication Date: 2019-05-28
黄山谷捷股份有限公司
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  • Abstract
  • Description
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Problems solved by technology

[0004] In order to solve the problems of the prior art, the object of the present invention is to overcome the deficiencies of the prior art, provide a new heat dissipation structure and processing technology of the IGBT module, and apply the graphene material to the IGBT chip with a high heat flux density in the form of a heat dissipation film Solve the problem of uneven heat dissipation of press-fit double-sided water cooling

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  • Double-sided water-cooling heat dissipation structure of high-power-density IGBT module and processing technology
  • Double-sided water-cooling heat dissipation structure of high-power-density IGBT module and processing technology
  • Double-sided water-cooling heat dissipation structure of high-power-density IGBT module and processing technology

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Embodiment Construction

[0033] The present invention will be further described below in conjunction with drawings and embodiments.

[0034] The gist of the present invention is to provide a simple solution to the problem of uneven heat dissipation of double-sided water cooling and improve the reliability of the module.

[0035] In the middle of the upper and lower copper-clad ceramic substrates of the present invention, 3-4 IGBT modules can be placed, that is, a module composed of IGBT subunits and diode subunits. A subunit refers to a semiconductor structure made of a chip and its front and back sides. Sum. IGBT sub-units and diode sub-units can be interleaved, which is beneficial to suppress thermal coupling. The upper and lower copper-clad ceramic substrates and their intermediate chip subunits are regarded as a group, and several groups of such structures can be placed in the middle of the upper and lower water-cooled plate radiators (mainly depending on the heat dissipation power of the chip). ...

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Abstract

The invention relates to a double-sided water-cooling heat dissipation packaging structure of a high-power-density IGBT module and a processing technology. The double-sided water-cooling heat dissipation packaging structure comprises IGBT subunits, diode subunits, a copper-clad ceramic substrate, a buffer gasket, a solder layer, a heat-conducting silicone grease layer, a graphene heat dissipationlayer and an upper and lower water-cooling plate radiator. The graphene heat dissipation layer takes the surface of the chip transferred to an appointed position as a rapid transverse heat dissipationlayer, and local heat of the chip is rapidly and transversely spread, so that rapid cooling of a local hot spot is realized. The double-sided water-cooling heat dissipation packaging structure is easy to manufacture and high in flexibility, uneven heat dissipation of the water-cooling radiator can be effectively relieved, and therefore the reliability and the service life of the device are improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a double-sided water-cooled heat dissipation structure and a processing technology of a high-power-density IGBT module. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT) is a composite full-control voltage-driven power semiconductor device composed of a metal-oxide semiconductor field-effect transistor and a fast diode. It combines the advantages of MOSFET and FRD and has fast switching speed. , high input impedance, short reverse recovery time, good thermal stability, on-state voltage drop, high voltage and other characteristics, widely used in wind energy, solar energy, rail transit, electric vehicles, smart grid, home appliance frequency conversion fields, etc., has become a power The mainstream of semiconductor devices. With the continuous breakthrough of new technology and new process, and the improvement of power level, the applicati...

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Application Information

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IPC IPC(8): H01L23/367H01L23/373H01L23/473H01L29/739
Inventor 许媛张燕飞鲍婕宁仁霞陈珍海周斌张俊武
Owner 黄山谷捷股份有限公司
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