Supercharge Your Innovation With Domain-Expert AI Agents!

A cuinse that reflects ultraviolet light 2 Battery anti-reflection layer and preparation method

An anti-reflection layer and anti-reflection technology, applied in the direction of photovoltaic power generation, circuits, electrical components, etc., can solve the problems of increasing the incidence of visible light and the inability to effectively reflect ultraviolet light, and achieve the effect of improving light transmittance and reflectivity

Active Publication Date: 2020-12-25
安徽徽一通讯科技有限公司
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Aiming at the deficiencies of the prior art, the present invention provides a CuInSe2 cell anti-reflection layer capable of reflecting ultraviolet light and a preparation method thereof, which solves the problem of existing CuInSe 2 The anti-reflection layer of the battery, while effectively increasing the incidence of visible light, cannot achieve the technical problem of effectively reflecting ultraviolet light

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A cuinse that reflects ultraviolet light <sub>2</sub> Battery anti-reflection layer and preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] CuInSe 2 The battery anti-reflection layer includes the following raw materials: 3g of TiO with an average particle size of ≤50nm 2 , 5g of Al with an average particle size ≤ 50nm 2 o 3 , 100g of MgF with average particle size ≤ 100nm 2 ;

[0029] The above CuInSe 2 The preparation method of the battery anti-reflection layer comprises the following steps:

[0030] S1. Take 3g of TiO with an average particle size ≤ 50nm 2 , 5g of Al with an average particle size ≤ 50nm 2 o 3 , 100g of MgF with average particle size ≤ 100nm 2 Put it into a ball mill jar together with 60mL of absolute ethanol, using zirconium beads with a diameter of 3mm, in N 2 Under protection, ball milling for 120 minutes, placed in a vacuum drying oven, and vacuum drying at 78°C for 2 hours to prepare a powdery anti-reflection component;

[0031] S2. Place the powdery anti-reflection component in step S1 in the mold, and use a powder tablet press to perform tableting treatment according to th...

Embodiment 2

[0035] CuInSe 2 The battery anti-reflection layer includes the following raw materials: 5g of TiO with an average particle size of ≤50nm 2 , 5g of Al with an average particle size ≤ 50nm 2 o 3 , 100g of MgF with average particle size ≤ 100nm 2 ;

[0036] The above CuInSe 2 The preparation method of the battery anti-reflection layer comprises the following steps:

[0037] S1. Take 5g of TiO with an average particle size ≤ 50nm 2 , 5g of Al with an average particle size ≤ 50nm 2 o3 , 100g of MgF with average particle size ≤ 100nm 2 Put it into a ball mill jar together with 60mL of absolute ethanol, using zirconium beads with a diameter of 3mm, in N 2 Under protection, ball milling for 180 minutes, placed in a vacuum drying oven, and vacuum drying at 78°C for 1 hour to prepare a powdery anti-reflection component;

[0038] S2. Put the powdery anti-reflection component in step S1 in the mold, and use a powder tablet press to perform tableting treatment according to the fol...

Embodiment 3

[0042] CuInSe 2 The battery anti-reflection layer includes the following raw materials: 5g of TiO with an average particle size of ≤50nm 2 , 3g of Al with an average particle size ≤ 50nm 2 o 3 , 100g of MgF with average particle size ≤ 100nm 2 ;

[0043] The above CuInSe 2 The preparation method of the battery anti-reflection layer comprises the following steps:

[0044] S1. Take 5g of TiO with an average particle size ≤ 50nm 2 , 3g of Al with an average particle size ≤ 50nm 2 o 3 , 100g of MgF with average particle size ≤ 100nm 2 Put it into a ball mill jar together with 60mL of absolute ethanol, using zirconium beads with a diameter of 3mm, in N 2 Under protection, ball milling for 150 minutes, placed in a vacuum drying oven, and vacuum drying at 78°C for 1.5 hours to prepare a powdery anti-reflection component;

[0045] S2. Put the powdery anti-reflection component in step S1 into the mold, and use a powder tablet press to perform tableting treatment according to ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
particle sizeaaaaaaaaaa
transmittivityaaaaaaaaaa
Login to View More

Abstract

The invention relates to the technical field of thin film solar cell manufacturing, and discloses a CuInSe2 battery antireflection layer capable of reflecting ultraviolet light. The CuInSe2 battery antireflection layer comprises the following raw materials in parts by weight: 3-5 parts of TiO2 powder with the average particle size of less than or equal to 50nm, 3-8 parts of Al2O3 powder with the average particle size less than or equal to 50nm, and 100 parts of MgF2 powder with the average particle size less than or equal to 100 nm. The preparation method of the CuInSe2 battery antireflectionlayer comprises the following steps: firstly preparing a powdery antireflection component, then preparing a flaky antireflection component, then preparing a target material component for the antireflection layer, and finally preparing the CuInSe2 battery antireflection layer. According to the CuInSe2 battery antireflection layer and the preparation method thereof, the technical problem that an existing CuInSe2 battery antireflection layer cannot effectively reflect ultraviolet rays while visible light incidence is effectively increased is solved.

Description

[0001] The invention relates to the technical field of thin-film solar cell production, in particular to a CuInSe that can reflect ultraviolet light 2 Battery anti-reflection layer and preparation method. Background technique [0002] CuInSe 2 / CdS solar cells are p-type CuInSe 2 and n-type CdS heterojunction thin-film solar cells, such as figure 1 As shown, a total of five layers of films are deposited on the glass substrate 1, which are as follows from bottom to top: glass substrate 1, metal Mo back contact layer 2 with a thickness of 500nm, and CuInSe with a thickness of 2um. 2 The absorption layer 3, the CdS buffer layer 4 with a thickness of 50nm, the intrinsic ZnO layer 5 with a thickness of 50nm, the ZnO:Al window layer 6 with a thickness of 500nm, and finally an anti-reflection layer 7 is coated on the ZnO:Al window layer 6. Increase the incidence of light. [0003] Among them, CuInSe with an energy bandgap of 1.53eV 2 The absorption layer 3 matches well with the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0216H01L31/0336H01L31/0749H01L31/18
CPCY02E10/541Y02P70/50
Inventor 不公告发明人
Owner 安徽徽一通讯科技有限公司
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com